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Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas
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10.1116/1.3655561
/content/avs/journal/jvsta/29/6/10.1116/1.3655561
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/6/10.1116/1.3655561
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Figures

Image of FIG. 1.
FIG. 1.

(a) SiC etch rates, and (b) SiC/PR etch selectivities as functions of Ar, N2, or O2 fractions in HBr-Ar, N2, or O2 plasmas. The process conditions are: p = 6 mTorr, W = 700 W, Wdc = 200 W, and q = 40 sccm. The solid lines are to guide the eye only.

Image of FIG. 2.
FIG. 2.

Measured (solid line + symbol) and model-predicted (dashed line) plasma parameters as functions of additive gas fraction in (a) HBr-Ar, (b) HBr-N2, and (c) HBr-O2 plasmas. The data for the HBr-Ar and N2 plasmas are taken from Ref. 23. The conditions correspond to Fig. 1.

Image of FIG. 3.
FIG. 3.

Model-predicted densities of neutral species: (a) pure HBr plasma, (b) Br atom density as a function of Ar, N2, or O2 fractions in HBr-Ar, N2, or O2 plasmas, and (c) H atom density as a function of Ar, N2, or O2 fractions in HBr-Ar, N2, or O2 plasmas. The data for the HBr-Ar and N2 plasmas are taken from Ref. 23 The conditions correspond to Fig. 1.

Image of FIG. 4.
FIG. 4.

(a) Negative dc bias voltage, and (b) the parameter ε 1/2ji characterizing the ion energy flux as functions of Ar, N2, or O2 fractions in HBr-Ar, N2, or O2 plasmas. The conditions correspond to Fig. 1.

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/content/avs/journal/jvsta/29/6/10.1116/1.3655561
2011-10-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/6/10.1116/1.3655561
10.1116/1.3655561
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