Illustration of surface chemistry for PET MLD on O-H terminated silicon.
Illustration of surface chemistry for PET MLD on amine-terminated silicon.
Possible structures of functionalization on hydroxylated silica surface (adapted from Ref. 4).
Growth rate of PET films as a function of the precursor pulse width at 145 °C. Both precursor pulses have the same width.
Growth rate of PET films as a function of the deposition temperature. Precursor pulse width was 15 s.
Thickness of PET films as a function of number of cycles at 145 °C. The precursor pulse length was 15 s for both precursors. The dotted line shows the effect of the APS layer plus the native oxide.
FTIR spectra of (a) reference PET and (b) PET thin films after 50 cycles MLD deposited at 145 °C.
(Color online) AFM images of (a) initial silicon oxide (b) pretreated APS surface and (c) 18 nm thick PET film deposited at 145 °C.
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