Continuous atomic layer deposition: Explanation for anomalous growth rate effects
(Color online) Flow scheme for the CALD reactor of TFS 200 R system: 1—precursor flow; 2—purging flow.
Growth rate curve of Al2O3 films deposited at 100 °C.
Scheme of the experimental setup for gas transfer studies. 1—main gas flow; 2—additional gas flow provided by gas entrainment; 3—mass spectrometer.
Measured and calculated data for He signal on port 1 with 100, 200, 500 sccm of N2 purge flows at 100 °C.
Measured and calculated data for He signal on port 2 with 100, 200, 500 sccm of N2 purge flows at 100 °C.
Growth rate as a function of residence time at 100–150 °C temperature range (measured and modeled data).
Parameters for model fitting at port 1.
Parameters for model fitting at port 2.
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