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Continuous atomic layer deposition: Explanation for anomalous growth rate effects
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10.1116/1.3662861
/content/avs/journal/jvsta/30/1/10.1116/1.3662861
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3662861

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Flow scheme for the CALD reactor of TFS 200 R system: 1—precursor flow; 2purging flow.

Image of FIG. 2.
FIG. 2.

Growth rate curve of Al2O3 films deposited at 100 °C.

Image of FIG. 3.
FIG. 3.

Scheme of the experimental setup for gas transfer studies. 1—main gas flow; 2—additional gas flow provided by gas entrainment; 3mass spectrometer.

Image of FIG. 4.
FIG. 4.

Measured and calculated data for He signal on port 1 with 100, 200, 500 sccm of N2 purge flows at 100 °C.

Image of FIG. 5.
FIG. 5.

Measured and calculated data for He signal on port 2 with 100, 200, 500 sccm of N2 purge flows at 100 °C.

Image of FIG. 6.
FIG. 6.

Growth rate as a function of residence time at 100–150 °C temperature range (measured and modeled data).

Tables

Generic image for table
TABLE I.

Parameters for model fitting at port 1.

Generic image for table
TABLE II.

Parameters for model fitting at port 2.

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/content/avs/journal/jvsta/30/1/10.1116/1.3662861
2011-11-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous atomic layer deposition: Explanation for anomalous growth rate effects
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3662861
10.1116/1.3662861
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