1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone
Rent:
Rent this article for
USD
10.1116/1.3664122
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, South Korea and Technology Development Team, System-LSI Division, Samsung Electronics Co. Ltd., Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-Do, 446-711, South Korea
    2 WCU Hybrid Materials Program, Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, South Korea and Technology Development Team, System-LSI Division, Samsung Electronics Co. Ltd., Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-Do, 446-711, South Korea
    3 Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, South Korea
    4 Technology Development Team, System-LSI Division, Samsung Electronics Co. Ltd., Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-Do, 446-711, South Korea
    5 WCU Hybrid Materials Program, Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, South Korea
    6 Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, South Korea
    a) Electronic mail: cheolsh@snu.ac.kr
    b) Electronic mail: thinfilm@snu.ac.kr
    J. Vac. Sci. Technol. A 30, 01A126 (2012); http://dx.doi.org/10.1116/1.3664122
/content/avs/journal/jvsta/30/1/10.1116/1.3664122
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3664122
/content/avs/journal/jvsta/30/1/10.1116/1.3664122
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvsta/30/1/10.1116/1.3664122
2011-12-01
2014-12-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3664122
10.1116/1.3664122
SEARCH_EXPAND_ITEM