SEM cross section of the trenches etched using the STiGer DRIE process before alkaline treatment (left), magnified images of the top of the trenches (right).
Schematic representation of trench sidewalls removal during alkaline etching leading to silicon suspension nanobridges formation. (A) Initial stage before any wet treatment, (B) reduction of the sidewall thickness, (C) formation of the SiNWs, (D) SiNWs removal above 2 h of immersion.
SEM tilted view of monocrystalline silicon nanobridges after 120 min of TMAH (2%) – IPA (20%) etching at 10 °C, the SiNWs thickness is around 200 nm.
SEM (a) top and (b) magnified images of monocrystalline silicon nanobridges after 120 min of KOH (2%) – IPA (20%) etching at 10 °C. The SiNWs are 100 nm wide but an important proportion of the bridges is collapsed due to their thinness and their high density.
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