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Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches
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10.1116/1.3665217
/content/avs/journal/jvsta/30/1/10.1116/1.3665217
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3665217
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM cross section of the trenches etched using the STiGer DRIE process before alkaline treatment (left), magnified images of the top of the trenches (right).

Image of FIG. 2.
FIG. 2.

Schematic representation of trench sidewalls removal during alkaline etching leading to silicon suspension nanobridges formation. (A) Initial stage before any wet treatment, (B) reduction of the sidewall thickness, (C) formation of the SiNWs, (D) SiNWs removal above 2 h of immersion.

Image of FIG. 3.
FIG. 3.

SEM tilted view of monocrystalline silicon nanobridges after 120 min of TMAH (2%) – IPA (20%) etching at 10 °C, the SiNWs thickness is around 200 nm.

Image of FIG. 4.
FIG. 4.

SEM (a) top and (b) magnified images of monocrystalline silicon nanobridges after 120 min of KOH (2%) – IPA (20%) etching at 10 °C. The SiNWs are 100 nm wide but an important proportion of the bridges is collapsed due to their thinness and their high density.

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/content/avs/journal/jvsta/30/1/10.1116/1.3665217
2011-12-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3665217
10.1116/1.3665217
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