Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NH x radical formation
Schematic figure of the deposition apparatus.
Flow chart of the Monte Carlo simulation.
(Color online) GPC with exposure to varying amounts of precursors in a cycle.
(Color online) (a) XPS spectrum of the cobalt film formed by HW-ALD at 300 °C and, (b) concentration of carbon measured in the cobalt film by XPS.
(Color online) Cross-sectional views of the Co film formed on the trench at (a) 300 °C and (b) 150 °C. The width of the trench is 500 nm and the depth of trench is 5500 nm.
(Color online) Thickness profile of the trench fitted by single species or multiple species. Each number in parentheses corresponds to the estimated sticking probability.
(Color online) Sticking probabilities obtained by fitting the trench profiles shown in Fig. 5.
(Color online) Time evolution of the Q-mass signal of the exhaust gas.
(Color online) Gas-phase reaction estimated using the CHEMKIN-PRO software package.
(Color online) GPC with various distances between the filament and substrate.
(Color online) Time evolution of the Q-mass signal of m/z = 17, 66, 67, and 70 in the exhaust gas.
Relation between the relative film thickness at the bottom of the trench and deposition temperature.
Results of deposition experiments using various reducing reagents.
The main reactions in gas phase.
Estimated dissociation energy by quantum chemical calculation in units of kcal/mol.
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