Schematic structure of the amorphous silicon solar cell.
(a) X-ray spectra patterns and (b) grain size of AZO films deposited at various RF powers.
(Color online) (a) Transmittance spectra and (b) average transmittance in 400–800 nm of AZO films prepared at various RF powers.
Electrical properties as a function of the RF power for AZO films (150 nm) prepared by RF reactive magnetron sputtering.
Quantum efficiencies of single-junction a-Si:H solar cells with only an Ag back electrode, and with an AZO (deposited at various RF power)/Ag reflector.
Cross-sectional TEM photographs of the fabricated a-Si:H solar cell with an AZO/Ag back electrode.
Initial performance and the degradation (light-soaking of 1 sun at 60 °C for 1000 h) of the a-Si:H solar cells with AZO films as a function of the RF power.
Deposition parameters of AZO films prepared by in-line sputtering.
External parameters of single-junction a-Si:H solar cells with AZO films deposited at various RF powers compared to that of the cell with only an Ag back electrode.
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