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Chemical passivation of GaSb-based surfaces by atomic layer deposited ZnS using diethylzinc and hydrogen sulfide
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10.1116/1.3669519
/content/avs/journal/jvsta/30/1/10.1116/1.3669519
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3669519

Figures

Image of FIG. 1.
FIG. 1.

Thickness of ZnS as a function of the number of ALD cycles at 200 °C. ZnS films are deposited on TAM-treated GaSb substrates. The DEZn precursor and H2S are at room temperature and they are pulsed into the reactor for 85 and 500 ms, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Zn 2p and S 2p (inset) core scans of 15 nm-thick as-deposited ZnS. XPS spectra are collected at 90° take-off angle. Other deposition conditions are the same as in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Ga 2p3/2 [(a) and (b)] and Sb 3d3/2 [(c) and (d)] core scans of GaSb substrates capped with a 1 nm-thick ZnS layer following treatment with TAM and TAM-treated GaSb substrates, respectively. Both GaSb substrates were loaded into the XPS chamber immediately after the corresponding treatment. XPS spectra were collected at 90° take-off angle. Other ALD conditions are the same as those in Fig. 1.

Image of FIG. 4.
FIG. 4.

(Color online) Ga 2p3/2 [(a) and (b)] and Sb 3d3/2 [(c) and (d)] core scans of GaSb substrates capped with a 1 nm-thick ZnS layer following treatment with TAM and TAM-treated GaSb substrates, respectively. Both GaSb substrates were loaded into the XPS chamber after 14 days of exposure to atmospheric air. XPS spectra were collected at 90° take-off angle. Other ALD conditions are the same as those in Fig. 1.

Image of FIG. 5.
FIG. 5.

(Color online) In 3d5/2 (a), As 3d (b), and Sb 3d3/2 (c) core scans of TAM-treated InAs/GaSb surfaces (bottom) and InAs/GaSb surfaces passivated with 1 (middle) and 2 (top) nm-thick ZnS following TAM treatment. All samples were loaded into high vacuum XPS chamber immediately after passivation and treatment. XPS spectra were collected at 90° take-off angle. Other ALD conditions are the same as those in Fig. 1.

Image of FIG. 6.
FIG. 6.

(Color online) In 3d5/2 (a), As 3d (b), and Sb 3d3/2 (c) core scans of TAM-treated InAs/GaSb surfaces (bottom) and InAs/GaSb surfaces passivated with 1 (middle) and 2 (top) nm-thick ZnS following TAM treatment. All samples were loaded into high vacuum XPS chamber after 14 days of exposure to atmospheric air. XPS spectra were collected at 90° take-off angle. Other ALD conditions are the same as those in Fig. 1.

Image of FIG. 7.
FIG. 7.

(Color online) GIXRD pattern of 30 nm-thick ZnS deposited on TAM-treated GaSb substrate at 200 °C. Other ALD conditions are the same as those in Fig. 1.

Image of FIG. 8.
FIG. 8.

(Color online) PSI image of 30 nm-thick ZnS deposited on TAM-treated GaSb substrate at 200 °C. Other ALD conditions were the same as those in Fig. 1.

Tables

Generic image for table
TABLE I.

XPS results of passivated GaSb surfaces immediately following treatment and after 14 days of exposure to atmospheric air.

Generic image for table
TABLE II.

XPS results of passivated InAs/GaSb substrates immediately following treatment and after 14 days of exposure to atmospheric air.

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/content/avs/journal/jvsta/30/1/10.1116/1.3669519
2011-12-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical passivation of GaSb-based surfaces by atomic layer deposited ZnS using diethylzinc and hydrogen sulfide
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3669519
10.1116/1.3669519
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