1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/avs/journal/jvsta/30/1/10.1116/1.3670745
1.
1. S. George, Chem. Rev. 110, 111 (2010), and references therein.
http://dx.doi.org/10.1021/cr900056b
2.
2. F. Lee, S. Marcus, E. Shero, G. Wilk, J. Swerts, J. W. Maes, T. Blomberg, A. Delabie, M. Gros-Jean, and E. Deloffre, 2007 IEEE/SEMI Advanced Semiconductor Manufacturing, 2007 (unpublished), p. 359.
3.
3. J. R. Bakke, K. L. Pickrahn, T. P. Brennan, and S. F. Bent, Nanoscale 3, 3482 (2011)
http://dx.doi.org/10.1039/c1nr10349k
4.
4. P. F. Carcia, R. S. McLean, M. D. Groner, A. A. Dameron, and S. M. George, J. Appl. Phys. 106, 023533 (2009).
http://dx.doi.org/10.1063/1.3159639
5.
5. E. Granneman, P. Fischer, D. Pierreux, H. Terhorst, and P. Zagwijn, Surf. Coat. Technol. 201, 8899 (2007).
http://dx.doi.org/10.1016/j.surfcoat.2007.05.009
6.
6. R. G. Gordon, D. Hausmann, E. Kim, and J. Shepard, Chem. Vapor Depos. 9, 73 (2003).
http://dx.doi.org/10.1002/cvde.200390005
7.
7. T. Suntola and J. Antson, U.S. Patent No. 4,058,430 (15 November 1977).
8.
8. T. Suntola, A. Pakkala, and S. Lindfors, U.S. Patent No. 4,389,973 (28 June 1983).
9.
9. C. J. Hwang and K. S. Shim, U.S. Patent No. 2002/0043216 (18 April 2002).
10.
10. E. R. Dickey and W. A. Barrow, 52nd Annual Technical Conference Proceedings of the Society of Vacuum Coaters, 2009 (unpublished), pp. 720726.
11.
11. W. A. Barrow and E. R. Dickey, proceedings of the Fall Conference of the Association of Industrial Metallizers, Coaters and Laminators (AIMCAL), 2009 (unpublished).
12.
12. P. S. Maydannik, T. O. Kääriäinen, and D. C. Cameron, Chem. Eng. J. 171, 345 (2011).
http://dx.doi.org/10.1016/j.cej.2011.03.097
13.
13. D. H. Levy, R. S. Jerr and J. T. Carey, U.S. Patent No. 2009/0217878 (3 September 2009).
14.
14. E. H. A. Granneman and S. E. van Nooten, U.S. Patent No. 2011/0124199 (26 May 2011).
15.
15. D. J. Maas, B. van Someren, A. S. Lexmond, C. I. M. A. Spee, A. E. Duisterwinkel, and A. J. P. M. Vermeer, W.O. Patent 2010/024671 (4 March 2010).
16.
16. D. H. Levy, D. C. Freeman, S. F. Nelson, and P. J. Cowdery-Corvan, 8th International Conference Atomic Layer Deposition, Bruges, Belgium, 2008 (unpublished).
17.
17. D. H. Levy, D. C. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, Appl. Phys. Lett. 92, 192101 (2008).
http://dx.doi.org/10.1063/1.2924768
18.
18. D. H. Levy, S. F. Nelson, and D. Freeman, J. Display Technol. 5, 484 (2009).
http://dx.doi.org/10.1109/JDT.2009.2022770
19.
19. P. R. Fitzpatrick, Z. M. Gibbs, and S. M. George, J. Vac. Sci. Technol. A 30, 01A136 (2011).
20.
20. P. Poodt, A. Lankhorst, F. Roozeboom, V. Tiba, K. Spee, D. Maas, and A. Vermeer, 10th International Conference on Atomic Layer Deposition, Seoul, R. South Korea, 2010 (unpublished).
21.
21. P. Poodt, A. Lankhorst, F. Roozeboom, K. Spee, D. Maas, and A. Vermeer, Adv. Mater. 22, 3564 (2010).
http://dx.doi.org/10.1002/adma.201000766
22.
22. E. Granneman, Mater. Sci. Forum 573, 375 (2008).
http://dx.doi.org/10.4028/www.scientific.net/MSF.573-574.375
23.
23. B. Hoex, J. Schmidt, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 44903 (2008).
http://dx.doi.org/10.1063/1.2963707
24.
24. J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M.C.M. van de Sanden, and W. M. M. Kessels, Prog. Photovoltaics 16, 461 (2008).
http://dx.doi.org/10.1002/pip.823
25.
25. J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. W. Glunz, Appl. Phys. Lett. 92, 253504 (2008).
http://dx.doi.org/10.1063/1.2945287
26.
26. Photon International, March edition 146, 2011 (unpublished).
27.
27. E. H. A. Granneman, V. Kuznetsov, and K. Vanormelingen, Proceedings of the 25th EU PVSEC, Valencia, September, 2010 (unpublished).
28.
28. I. Cesar, I. Romijn, A. Mewe, E. Granneman, P. Vermont, and A. Weeber, Proceedings of the 37th IEEE Photovoltaic Specialist Conference, Seattle, June, 2011 (unpublished).
29.
29. P. Brand, Y. Veschetti, V. Sanzone, R. Cabal, X. Parges, K. Vanormelingen, and P. Vermont, Proceedings of the 37th IEEE Photovoltaic Specialist Conference, Seattle, June, 2011 (unpublished).
30.
30. A. Vermeer and G. P. Janssen, E.P. Patent No. 2281921 (9 February 2011).
31.
31. A. Vermeer, F. Roozeboom, P. Poodt, and R. Görtzen, MRS spring meeting, San Francisco, 2011 (unpublished).
32.
32. B. Vermang, A. Rothschild, A. Racz, J. John, J. Poortmans, R. Mertens, P. Poodt, V. Tiba, and F. Roozeboom, Prog. Photovoltaics 19, 733 (2011).
http://dx.doi.org/10.1002/pip.1092
33.
33. F. Werner, B. Veith, V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, and J. Schmidt, Appl. Phys. Lett. 97, 162103 (2010).
http://dx.doi.org/10.1063/1.3505311
34.
34. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. 88, 123509 (2006).
http://dx.doi.org/10.1063/1.2188379
35.
35. A. J. P. M. Vermeer, F. Roozeboom, and J. van Deelen, EP2360293 (11 February 2010).
36.
36. R. L. Hofmann, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
http://dx.doi.org/10.1063/1.1542677
37.
37. F. Lärmer and A. Schilp, U.S. Patent 5,498,312 (12 March 1996).
38.
38. F. Roozeboom et al., in Handbook of 3D Integration; Technology and Applications of 3D Integrated Circuits, edited by P. Garrou, C. Bower, and P. Ramm (Wiley, New York, 2008), pp. 4791.
39.
39. F. Roozeboom, A. M. Lankhorst, G. Winands, N. B. Koster, P. Poodt, A. Vermeer, G. Dingemans, and W. M. M. Kessels, 11th International Conference on Atomic Layer Deposition, Cambridge, MA, 2011 (unpublished).
40.
40. F. Roozeboom, A. Lankhorst, P. Poodt, N. Koster, H. Winands, and A. Vermeer, WO 2011105908 (28 February 2010).
41.
41. H.A. Atwater and A. Polman, Nat. Mater. 9, 205 (2010).
http://dx.doi.org/10.1038/nmat2629
42.
42. B. O’Connor, K. P. Pipe, and M. Shtein, Appl. Phys. Lett. 92, 193306 (2008).
http://dx.doi.org/10.1063/1.2927533
43.
43. M. Hamedi, R. Forchheimer, and O. Inganas, Nat. Mater. 6, 357 (2007).
http://dx.doi.org/10.1038/nmat1884
44.
44. J. B. Lee and V. Subramanian, IEEE Trans. Electron Dev. 52, 269 (2005).
http://dx.doi.org/10.1109/TED.2004.841331
45.
45. S. D. Hart, G. R. Maskaly, B. Temelkuran, P. H. Prideaux, J. D. Joannopoulos, and Y. Fink, Science 296, 510 (2002).
http://dx.doi.org/10.1126/science.1070050
46.
46. G. Deschamps, H. Caruel, M.-E. Borredon, C. Bonnin, and C. Vignoles, Environ. Sci. Technol. 37, 1013 (2003).
http://dx.doi.org/10.1021/es020061s
47.
47. A. Vilcnik, I. Jerman, A. S. Vuk, M. Kozelj, B. Orel, B. Tomsic, B. Simonic, and J. Kovac, Langmuir 25, 5869 (2009).
http://dx.doi.org/10.1021/la803742c
48.
48. K. T. Meilert, D. Laub, and J. Kiwi, J. Mol. Catal. A: Chem. 237, 101 (2005).
http://dx.doi.org/10.1016/j.molcata.2005.03.040
49.
49. A. G. Cunha, C. Freire, A. Silvestre, C. P. Neto, A. Gandini, M. N. Belgacem, D. Chaussy, and D. Benevent,. J. Colloid Interface Sci. 344, 588 (2010).
http://dx.doi.org/10.1016/j.jcis.2009.12.057
50.
50. W. E. Tenhaeff and K. K. Gleason, Adv. Funct. Mater. 18, 979 (2008).
http://dx.doi.org/10.1002/adfm.v18:7
51.
51. M. Knez, K. Nielsch, and L. Niinistö, Adv. Mater. 19, 3425 (2007).
http://dx.doi.org/10.1002/adma.v19:21
52.
52. Q. Peng, X. Y. Sung, J. C. Spagnola, G. K. Hyde, R. J. Spontak, and G. N. Parsons, Nano Lett. 7, 719 (2007).
http://dx.doi.org/10.1021/nl062948i
53.
53. G. K. Hyde, G. Scarel, J. C. Spagnola, Q. Peng, K. Lee, B. Gong, K. G. Roberts, K. M. Roth, C. A. Hanson, C. K. Devine, S. M. Stewart, D. Hojo, J. S. Na, J. S. Jur, and G. N. Parsons, Langmuir 26, 2550 (2010).
http://dx.doi.org/10.1021/la902830d
54.
54. Q. Peng, B. Gong, and G. N. Parsons, Nanotechnology 22, 155601 (2011).
http://dx.doi.org/10.1088/0957-4484/22/15/155601
55.
55. J. S. Jur and G. N. Parsons, ACS Appl. Mater. Interface 3, 299 (2011).
http://dx.doi.org/10.1021/am100940g
56.
56. W. M. M. Kessels, H. B. Profijt, S. E. Potts, and M. C. M. van de Sanden, ALD of Nanostructured Materials, edited by M. Knez and N. Pinna (Wiley-VCH, Weinheim, 2011) pp. 131159.
57.
57. P. Poodt, B. Kniknie, A. Branca, H. Winands, and F. Roozeboom, Phys. Status Solidi (RRL) 5, 165 (2011).
http://dx.doi.org/10.1002/pssr.201004542
58.
58. S. M. George, A. A. Dameron, and B. Yoon, Acc. Chem. Res. 42, 498 (2009).
http://dx.doi.org/10.1021/ar800105q
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3670745
Loading
/content/avs/journal/jvsta/30/1/10.1116/1.3670745
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvsta/30/1/10.1116/1.3670745
2011-12-14
2015-07-05

Abstract

Atomic layer deposition(ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatialALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatialALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatialALD, with a focus on photovoltaics and flexible electronics.

Loading

Full text loading...

/deliver/fulltext/avs/journal/jvsta/30/1/1.3670745.html;jsessionid=35fh597jigk48.x-aip-live-03?itemId=/content/avs/journal/jvsta/30/1/10.1116/1.3670745&mimeType=html&fmt=ahah&containerItemId=content/avs/journal/jvsta
true
true
This is a required field
Please enter a valid email address

Oops! This section does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/1/10.1116/1.3670745
10.1116/1.3670745
SEARCH_EXPAND_ITEM