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SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials
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10.1116/1.3679551
/content/avs/journal/jvsta/30/2/10.1116/1.3679551
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/2/10.1116/1.3679551
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Figures

Image of FIG. 1.
FIG. 1.

HfO2 and SiO2 etch rates as a function of the self-bias power. Process condition: SiCl4/Cl2 mixture (50/75 sccm) at 5 mTorr and 1000 W rf inductive power. Negative values indicate that SiClx polymer deposition takes place on the wafer (no etching) and provides the deposition rate.

Image of FIG. 2.
FIG. 2.

XPS analysis of a HfO2(10 nm)/SiO2(0.7 nm)/Si stack: (a) before etching; (b) after the partial etching of the HfO2 layer by a SiCl4(50 sccm)/Cl2(75 sccm) plasma at 5 mTorr with 1000 W ICP power and 30 W bias power; and (c) after an overetch period of 4 seconds on the SiO2 underlayer.

Image of FIG. 3.
FIG. 3.

HfO2 and SiO2 etch rates as a function of the Cl2 gas flow rate in the SiCl4 plasma. Process condition: SiCl4/Cl2 mixture (50/X sccm) at 5 mTorr and 1000 W rf inductive power and 30 W rf bias power.

Image of FIG. 4.
FIG. 4.

FIB-STEM cross section of a typical metal gate stack made of a SiO2/SiN hard mask, a Si/TiN metal gate and an HfSiON/SiON gate dielectric. (a) before HfSiON etching; (b) after HfSiON etching in BCl3 plasma chemistry; (c) after HfSiON etching in the SiCl4/Cl2 chemistry (150 sccm of SiCl4 with condition of Fig. 2); (d) after HfSiON etching in SiCl4/Cl2 and HF dip.

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/content/avs/journal/jvsta/30/2/10.1116/1.3679551
2012-02-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/2/10.1116/1.3679551
10.1116/1.3679551
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