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Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya)
a)This paper is based on material presented at the 57th Symposium of the American Vacuum Society, Albuquerque, NM, 17–22 October 2010.
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10.1116/1.3695995
/content/avs/journal/jvsta/30/3/10.1116/1.3695995
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/3/10.1116/1.3695995

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Model-predicted densities (a) of major neutral ground-state species and fluxes of the CF x species (b) as functions of CHF3/O2 mixing ratios.

Image of FIG. 2.
FIG. 2.

(Color online) Measured (symbol + solid line) and model-predicted (dashed line) densities of charged species as functions of CHF3/O2 mixing ratios.

Image of FIG. 3.
FIG. 3.

Surface energy of the silicon according to O2 gas fraction.

Image of FIG. 4.
FIG. 4.

(Color online) Relative atomic percentage on the plasma treated-surface according to O2 gas fraction.

Image of FIG. 5.
FIG. 5.

(Color online) (a) C(1s) and (b) O(1s) spectra according to O2 gas fraction.

Tables

Generic image for table
TABLE I.

Reaction set for CHF3/O2 plasma neutral kinetics.

Generic image for table
TABLE II.

Reaction set for CHF3/O2 plasma balance equation.

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/content/avs/journal/jvsta/30/3/10.1116/1.3695995
2012-03-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya)
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/3/10.1116/1.3695995
10.1116/1.3695995
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