Evolution of the FTIR spectra of the SiNx films by annealing temperature.
Deconvoluted FTIR spectra of the as-deposited sample (a) and the sample annealed at 700 °C (b).
High frequency C-V curves for as-deposited and annealed Al/Si3N4/Si/Al samples and the thermally grown Al/SiO2/Si/Al MIS structures.
C-V curves of as-deposited Al/Si3N4/Si MIS capacitor before and after gamma radiation at different doses.
C-V curves of Al/Si3N4/Si MIS capacitor annealed at 700 °C before and after gamma radiation at different doses.
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