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Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors
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10.1116/1.4720351
/content/avs/journal/jvsta/30/4/10.1116/1.4720351
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4720351
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Evolution of the FTIR spectra of the SiNx films by annealing temperature.

Image of FIG. 2.
FIG. 2.

Deconvoluted FTIR spectra of the as-deposited sample (a) and the sample annealed at 700 °C (b).

Image of FIG. 3.
FIG. 3.

High frequency C-V curves for as-deposited and annealed Al/Si3N4/Si/Al samples and the thermally grown Al/SiO2/Si/Al MIS structures.

Image of FIG. 4.
FIG. 4.

C-V curves of as-deposited Al/Si3N4/Si MIS capacitor before and after gamma radiation at different doses.

Image of FIG. 5.
FIG. 5.

C-V curves of Al/Si3N4/Si MIS capacitor annealed at 700 °C before and after gamma radiation at different doses.

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/content/avs/journal/jvsta/30/4/10.1116/1.4720351
2012-05-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4720351
10.1116/1.4720351
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