Schematic of the PECVD system used in this experiment.
(Color online) Schematic diagram of arrangement of holes on the electrode.
(Color online) Layout of hole-array electrode designs: (a) electrodes 1 and 2 (single), (b) electrodes 3 and 4 (mixed; deep and shallow), (c) electrodes 5 and 6 (mixed; dense, sparse), (d) electrodes 1–4 of cross-sectional diagram.
(Color online) Deposition rate as a function of power at 8 Torr, 2%–4% SiH4 in H2 (1000 SCCM) discharge.
Deposition rate as a function of the total gas flow at 8 Torr, 3% SiH4 in H2 (500, 1000, and 1500 SCCM) at the power of 400 W.
(Color online) Variation of deposition rate as a function of hole-array structure electrode. The conditions of (a–c) are 3% SiH4 in H2 (500 SCCM) and (d–f) are 3% SiH4 in H2 (1000 SCCM) at 8 Torr and constant power (400 W).
(Color online) Crystallinity (right axis) as a function of the hole-array structure electrode obtained from the Raman spectroscopy and the electrical conductivity (left axis) of μc-Si thin films. The film deposition condition was 3% in H2 (500 SCCM) at 8 Torr, and constant power (400 W).
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