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Effects of showerhead hole structure on the deposition of hydrogenated microcrystalline silicon thin films by vhf PECVD
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10.1116/1.4721287
/content/avs/journal/jvsta/30/4/10.1116/1.4721287
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4721287
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the PECVD system used in this experiment.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic diagram of arrangement of holes on the electrode.

Image of FIG. 3.
FIG. 3.

(Color online) Layout of hole-array electrode designs: (a) electrodes 1 and 2 (single), (b) electrodes 3 and 4 (mixed; deep and shallow), (c) electrodes 5 and 6 (mixed; dense, sparse), (d) electrodes 1–4 of cross-sectional diagram.

Image of FIG. 4.
FIG. 4.

(Color online) Deposition rate as a function of power at 8 Torr, 2%–4% SiH4 in H2 (1000 SCCM) discharge.

Image of FIG. 5.
FIG. 5.

Deposition rate as a function of the total gas flow at 8 Torr, 3% SiH4 in H2 (500, 1000, and 1500 SCCM) at the power of 400 W.

Image of FIG. 6.
FIG. 6.

(Color online) Variation of deposition rate as a function of hole-array structure electrode. The conditions of (a–c) are 3% SiH4 in H2 (500 SCCM) and (d–f) are 3% SiH4 in H2 (1000 SCCM) at 8 Torr and constant power (400 W).

Image of FIG. 7.
FIG. 7.

(Color online) Crystallinity (right axis) as a function of the hole-array structure electrode obtained from the Raman spectroscopy and the electrical conductivity (left axis) of μc-Si thin films. The film deposition condition was 3% in H2 (500 SCCM) at 8 Torr, and constant power (400 W).

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/content/avs/journal/jvsta/30/4/10.1116/1.4721287
2012-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of showerhead hole structure on the deposition of hydrogenated microcrystalline silicon thin films by vhf PECVD
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4721287
10.1116/1.4721287
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