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Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures
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10.1116/1.4731200
/content/avs/journal/jvsta/30/4/10.1116/1.4731200
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4731200
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Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) SEM images taken from β-FeSi2 thin films grown on Si(111) and Si(001) substrates, respectively. (c) XRD spectra measured by GADDS from the β-FeSi2/Si(111) and β-FeSi2/Si(001) samples, showing the pure phase structure of β-FeSi2 grown on both Si(111) and Si(001) substrates.

Image of FIG. 2.
FIG. 2.

(Color online) Pole-figures measured from the β-FeSi2/Si(111) sample aiming at the (a) Si(220), (b) β-FeSi2(220), and (c) β-FeSi2(422) planes. (d) Atomic arrangements at the interface obtained from (a), (b), and (c), which are consistent with the commonly observed epitaxial growth of β-FeSi2 on Si(111) reported in the literature.

Image of FIG. 3.
FIG. 3.

(Color online) Pole-figures measured from the β-FeSi2/Si(001) sample aiming at the (a) Si(111), (b) β-FeSi2(220), and (c) β-FeSi2(422) planes. (d) The commonly observed atomic arrangements at the interface of β-FeSi2(100)//Si(001) reported in the literature, which are conflicting with the measured pole-figures shown in (a), (b), and (c).

Image of FIG. 4.
FIG. 4.

(Color online) Simulation of pole-figures (a) β-FeSi2(220) and (c) β-FeSi2(422) by facing Si(001) with β-FeSi2(431) atomic plane. (b) and (d) Completely fitting the experimental results in Figs. 3(b) and 3(c) by inverting and 90°-rotating the β-FeSi2(431) domains. (e) Atomic arrangements at the β-FeSi2(431)//Si(001) interface derived from the pole-figure simulations. The in-plane orientation turned out to be β-FeSi2[-111]//Si[110] with a lattice mismatch of -3.6% and β-FeSi2[013]//Si[-210] with a lattice mismatch of +2.1%; the angular mismatches are about +1.1% and -1.7% for the obtuse and acute angles, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) Photoelectron spectra measured from the β-FeSi2/Si(111) and β-FeSi2/Si(001) thin films using an Al-Kα x ray excitation (hv = 1486.6 eV); (a) valence-band structure, (b) Fe2p core-level, (c) Si2p core-level of β-FeSi2 on Si(111) substrate, and (d) Si2p core-level of β-FeSi2 on Si(001) substrate.

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/content/avs/journal/jvsta/30/4/10.1116/1.4731200
2012-06-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/30/4/10.1116/1.4731200
10.1116/1.4731200
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