(Color online) Raman spectra of 50–60 nm thick TiO2 films grown in reactor 1 at different temperatures (a) and of 6.5–146 nm thick films grown in reactor 2 at 500 °C (b). Bold ticks at the horizontal axes indicate the positions of TiO2 II peaks measured by Mammone et al. (Refs. 34 and 35 ).
(Color online) Raman spectra of TiO2 films grown in reactor 1 at 500 °C (upper pair) and 425 °C (lower pair) according as whether the TiCl4 pulse length x 1 was 0.5 or 2 s.
(Color online) XRD θ−2θ scans of 50–60 nm thick TiO2 films grown in reactor 1 at different temperatures. Bold ticks at the horizontal axis indicate 2θ angles of anatase, rutile, phase II, and sapphire reflections taken from the databases referred to in the text. Note the interference fringes accompanying R/II 2 0 0 and R/II 4 0 0 reflections in the films grown at 475–500 °C. The fringes prove good crystalline quality of the films.
(Color online) Growth temperature dependences of the 2θ value of the XRD R/II 4 0 0 reflection (see Fig. 3 ) and full widths at half maximum of this reflection and its RCs.
(Color online) XRD φ-scans of a 50 nm thick TiO2 film grown in reactor 1 at 600 °C. Indicated are the corresponding reflection planes.
(Color online) Reciprocal space maps of a 150 nm thick TiO2 film grown in reactor 2 at 600 °C. Indicated are the 2θ reflection planes, the interplane spacings d determined for the centers of these reflections, and the angles and the number of φ-reflections.
Article metrics loading...
Full text loading...