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Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
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10.1116/1.4765642
/content/avs/journal/jvsta/31/1/10.1116/1.4765642
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4765642

Figures

Image of FIG. 1.
FIG. 1.

Gallium content in film measured by energy dispersive x-ray analysis vs percentage Ga/(Ga+Zn) ALD cycle fraction at 250 °C. Inset shows the growth rate–dose time for the DEZn and TEGa precursors.

Image of FIG. 2.
FIG. 2.

Transmission electron micrograph, plan view bright field images of ZnO:Ga film using TEGa:DEZn cycle ratio of 1:20 at 300 °C.

Image of FIG. 3.
FIG. 3.

X-ray diffraction spectra of ZnO:Ga films grown using varying ratios of TEGa:DEZn cycles.

Image of FIG. 4.
FIG. 4.

Variation of sheet resistance of ZnO:Ga films as a function of percentage dopant cycles (TEGa/(TEGa + DEZn)).

Image of FIG. 5.
FIG. 5.

Carrier concentration and mobilities of varying doping levels in ZnO:Ga films measured by the Hall effect.

Image of FIG. 6.
FIG. 6.

UV-visible-IR transmission (upper) of ZnO:Ga films deposited on glass. The inset shows the influence of carrier concentration on the band edge. Reflectivity (lower) shows the effect of carrier concentration on the IR cut-off.

Image of FIG. 7.
FIG. 7.

Current density–voltage characteristics of a typical Cd1−xZnxS/CdTe photovoltaic cell on a ZnO:Ga–glass substrate.

Tables

Generic image for table
TABLE I.

ALD growth parameters.

Generic image for table
TABLE II.

Average of device parameters illuminated under AM1.5. Efficiency (η), short circuit current density (Jsc), open circuit voltage (Voc), series resistance (Rs), and shunt resistance (Rsh).

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/content/avs/journal/jvsta/31/1/10.1116/1.4765642
2012-11-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4765642
10.1116/1.4765642
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