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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
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10.1116/1.4769207
/content/avs/journal/jvsta/31/1/10.1116/1.4769207
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4769207
/content/avs/journal/jvsta/31/1/10.1116/1.4769207
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/content/avs/journal/jvsta/31/1/10.1116/1.4769207
2012-12-06
2014-08-21
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Scitation: Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4769207
10.1116/1.4769207
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