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Preparation and phase structures of Zn–Ti–O ternary compounds by atomic layer deposition
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10.1116/1.4769451
/content/avs/journal/jvsta/31/1/10.1116/1.4769451
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4769451

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Ti 2p, (b) Zn 2p, (c) O 1s spectra before sputtering, and (d) O 1s spectrum after Ar ion sputtering of (2:5)-ZTO films on Si postannealed at 700 °C for 2 h.

Image of FIG. 2.
FIG. 2.

Phase diagram of bulk Zi–Ti–O restricted to a temperature range between 400 and 1000 °C.

Image of FIG. 3.
FIG. 3.

(Color online) XRD patterns of (a) (1:2)-ZTO, (b) (2:5)-ZTO, and (c)(1:3)-ZTO films on Si after 600–900 °C postannealing.

Image of FIG. 4.
FIG. 4.

SEM image of (1:2)-ZTO film on Si deposited at 200 °C and postannealed at 900 °C.

Image of FIG. 5.
FIG. 5.

SEM images of the (2:5)-ZTO films on Si deposited at 200 °C and postannealed at (a) 600 °C, (b) 700 °C, (c) 800 °C, and (d) 900 °C.

Tables

Generic image for table
TABLE I.

Processing condition, thickness, composition, and GPC values of ZTO, ZnO, and TiO2 samples.

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/content/avs/journal/jvsta/31/1/10.1116/1.4769451
2012-11-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preparation and phase structures of Zn–Ti–O ternary compounds by atomic layer deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/1/10.1116/1.4769451
10.1116/1.4769451
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