Preparation and phase structures of Zn–Ti–O ternary compounds by atomic layer deposition
(Color online) (a) Ti 2p, (b) Zn 2p, (c) O 1s spectra before sputtering, and (d) O 1s spectrum after Ar ion sputtering of (2:5)-ZTO films on Si postannealed at 700 °C for 2 h.
Phase diagram of bulk Zi–Ti–O restricted to a temperature range between 400 and 1000 °C.
(Color online) XRD patterns of (a) (1:2)-ZTO, (b) (2:5)-ZTO, and (c)(1:3)-ZTO films on Si after 600–900 °C postannealing.
SEM image of (1:2)-ZTO film on Si deposited at 200 °C and postannealed at 900 °C.
SEM images of the (2:5)-ZTO films on Si deposited at 200 °C and postannealed at (a) 600 °C, (b) 700 °C, (c) 800 °C, and (d) 900 °C.
Processing condition, thickness, composition, and GPC values of ZTO, ZnO, and TiO2 samples.
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