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On the significance of thermoelectric and thermionic emission currents induced by chemical reactions catalyzed on nanofilm metal–semiconductor heterostructures
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10.1116/1.4774217
/content/avs/journal/jvsta/31/2/10.1116/1.4774217
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4774217
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Charge carrier transport in a nanofilm metal–semiconductor structure: (1) and (2) thermionic emission currents of electrons, (3) thermal drift of electrons (Seebeck effect). Here, φ b —Schottky barrier height, EF —Fermi level of electrons, Ec —conduction-band bottom, Ev —valence-band top, ΔTS —temperature difference in the semiconductor layer, and U TE—thermoelectric power.

Image of FIG. 2.
FIG. 2.

(Color online) Calculated thermoelectric current in a metal/n-Si structure at 300 K as a function of the heating power: J TE—thermoelectric current, J TI—thermionic emission current. Insets show a schematic drawing of the temperature distribution in the metal/n-Si structure in case of (top) thermoelectric current J TE and (bottom) thermionic emission current J TI.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependence of the calculated thermal conductivity k Si and the temperature difference ΔTS across the silicon layer with d Si = 525 μm thickness for the varied heating power.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependence of the calculated thermoelectric current in a metal/n-Si structure for various heating powers.

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/content/avs/journal/jvsta/31/2/10.1116/1.4774217
2013-01-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the significance of thermoelectric and thermionic emission currents induced by chemical reactions catalyzed on nanofilm metal–semiconductor heterostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4774217
10.1116/1.4774217
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