(Color online) Charge carrier transport in a nanofilm metal–semiconductor structure: (1) and (2) thermionic emission currents of electrons, (3) thermal drift of electrons (Seebeck effect). Here, φ b —Schottky barrier height, EF —Fermi level of electrons, Ec —conduction-band bottom, Ev —valence-band top, ΔTS —temperature difference in the semiconductor layer, and U TE—thermoelectric power.
(Color online) Calculated thermoelectric current in a metal/n-Si structure at 300 K as a function of the heating power: J TE—thermoelectric current, J TI—thermionic emission current. Insets show a schematic drawing of the temperature distribution in the metal/n-Si structure in case of (top) thermoelectric current J TE and (bottom) thermionic emission current J TI.
(Color online) Temperature dependence of the calculated thermal conductivity k Si and the temperature difference ΔTS across the silicon layer with d Si = 525 μm thickness for the varied heating power.
(Color online) Temperature dependence of the calculated thermoelectric current in a metal/n-Si structure for various heating powers.
Article metrics loading...
Full text loading...