SEM pictures of the hole profile (a) and the top–down view of the hole shape of the ACL etched using pure O2 for 50% overetching (b) and 100% overetching (c). The process condition was 900 W 60 MHz rf power, 20 mTorr of O2 (200 sccm), and 300 K of process temperature. The thickness of ACL was 0.5 μm.
(a) Variation of the amorphous carbon hole bottom size and (b) the distortion of amorphous carbon hole bottom during etching using oxygen plasma for the condition in Fig. 1 .
Differences of the OES signals measured for O2 plasma with and without COS (10 sccm) in the condition shown in Fig. 1 .
Variations of (a) the ACL etch rates and (b) DC-bias voltage with addition of COS or HBr in the O2 plasma. The process conditions were the same as those in Fig. 1 except for the addition/nonaddition of the additive gases HBr/COS, respectively.
(Color online) XPS narrow scan peaks of C1s, O1s, and S2p of the ACL surface etched in the oxygen plasma with and without COS (10 sccm). The etching conditions are the same as those in Fig. 1 except for the addition/nonaddition of the additive gases HBr/COS, respectively.
(Color online) AFM images of ACL surfaces (a) before etching, (b) after ACL etching with HBr, and (c) after ACL etching with COS. The process conditions are the same as those in Fig. 5 .
SEM images of (a) top–down hole shapes and (b) hole etch profiles of 50 nm amorphous carbon hole etched in oxygen plasma with 5% COS. The process conditions are the same as those in Fig. 5 .
Etch mechanism of amorphous carbon holes masked by SiON for etching in oxygen plasma with and without COS.
(Color online) Top portions of the amorphous carbon mask before and after the 1.5 μm thick HARC SiO2 etching for the 50 nm amorphous carbon hole patterns formed with and without COS.
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