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Separation of hot electron current component induced by hydrogen oxidation on resistively heated Pt/n-GaP Schottky nanostructures
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10.1116/1.4790122
/content/avs/journal/jvsta/31/2/10.1116/1.4790122
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4790122

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Chemically induced excitation and transport of energetic electrons over Schottky barrier in planar metal-semiconductor nanostructures (side cross-section). Barrier potential separates electric charge, and nanofilm cathode acts as catalyst for the reaction of oxidation of hydrogen to water. ϕ—Schottky barrier height, —vacuum level, Ec —conduction-band bottom, Ef —Fermi energy, Ev —valence band top. Schematics on the right depict sample mounting without a sample holder, using thin conductive wires attached to electrical feedthroughs of the analytical chamber.

Image of FIG. 2.
FIG. 2.

(Color online) Sample front view and electrical circuit schematics. Resistive heating voltage is applied at the Pt nanofilm terminals a-b. RTD temperature sensor is attached in the middle of the nanofilm area. Chemically induced current I and forward bias current I 0 due to the heating voltage are measured in the back contact circuit b-c.

Image of FIG. 3.
FIG. 3.

(Color online) Examples of current kinetics and explanation of the current separation procedure. Resistively heated Pt/n-GaP sample of 513 K surface temperature is exposed to H2 + 7O2 (a) and H2 + 7N2 (b) mixtures of 120 T total pressure. For the nanofilm heating voltage on, the forward bias current I 0 is recorded as a constant −10.5 μA instrumental compliance, rather than an actual value. Current generated by the sample is identified upon elimination of the forward bias component by switching off the nanofilm heating voltage. Difference of the peak values recorded in the reactive and neutral mixtures for the same nanocathode temperature is the nonadiabatic chemicurrent component.

Image of FIG. 4.
FIG. 4.

(Color online) Top: Variance of the total current magnitude with sample surface temperature; inset plot shows the separated nonadiabatic and thermal components. Bottom: Nonadiabatic current fraction in the total current, , and the surface reaction rate.

Image of FIG. 5.
FIG. 5.

(Color online) Dependence of the hot electron (nonadiabatic) and thermal currents on the surface reaction rate. The linear fit (dash line) represents a hot electron yield of 0.02 per H2 molecule oxidized.

Tables

Generic image for table
TABLE I.

Parameters of nanofilm resistive heating in 120 Torr mixture.

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/content/avs/journal/jvsta/31/2/10.1116/1.4790122
2013-02-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Separation of hot electron current component induced by hydrogen oxidation on resistively heated Pt/n-GaP Schottky nanostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4790122
10.1116/1.4790122
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