1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
Rent:
Rent this article for
USD
10.1116/1.4790132
/content/avs/journal/jvsta/31/2/10.1116/1.4790132
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4790132

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the interferometric setup. The inset (left lower corner) illustrates the interference of the focused laser beam that is partially reflected from the substrate and from the doubly clamped resonator.

Image of FIG. 2.
FIG. 2.

(Color online) Thickness of 3000 cycle TiN films deposited at different temperatures. Red squares are measurements taken with a Filmetrics reflectometer and blue diamonds are measurements taken with a VASE spectroscopic ellipsometer.

Image of FIG. 3.
FIG. 3.

(Color online) Stress of ALD deposited TiN films as a function of deposition temperature. Blue diamonds represent the measured stress while the brow solid line is the ideal stress due to thermal mismatch. The red squares represent intrinsic stress, not due to thermal mismatch sources.

Image of FIG. 4.
FIG. 4.

(Color online) XRD scans of the 〈200〉 peak of TiN for films deposited at 120, 160, 200, 250, and 300 °C. This was the only peak in the XRD scan that could not be attributed to the Si wafer.

Image of FIG. 5.
FIG. 5.

(Color online) Crystallite size derived by application of Scherrer's formula to XRD scans of the 〈200〉 peak of TiN as a function of deposition temperature.

Image of FIG. 6.
FIG. 6.

(Color online) Bargraph of TiN film composition as a function of deposition temperature. As temperature increases, we see a decrease in O and Cl and an increase in N. Cl is attributed to unreacted TiCl4 precursor and O is attributed to oxidation of unreacted Ti.

Image of FIG. 7.
FIG. 7.

(Color online) High resolution XPS spectra for Ti 2p orbital (a), N 1s orbital (b), O 1s orbital (c) and Cl 2p orbital, (d) of ALD synthesized TiN films deposited at 120, 160, 200, 250, and 300 °C.

Image of FIG. 8.
FIG. 8.

Scanning electron micrograph of a fabricated TiN beam resonator from the 200 °C deposition run. Beam dimensions are 11.3 μm long, 30 nm wide, and 72.9 nm thick.

Image of FIG. 9.
FIG. 9.

(Color online) Resonance curve for a 160 nm wide, 72 nm thick, and 14.1 μm long resonator. From the FWHM of the peak a Q-factor of ∼6900 is obtained.

Tables

Generic image for table
TABLE I.

ALD TiN deposition recipe used in this work. All films were deposited for 3000 cycles.

Loading

Article metrics loading...

/content/avs/journal/jvsta/31/2/10.1116/1.4790132
2013-02-05
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4790132
10.1116/1.4790132
SEARCH_EXPAND_ITEM