(Color online) Schematic diagram of the interferometric setup. The inset (left lower corner) illustrates the interference of the focused laser beam that is partially reflected from the substrate and from the doubly clamped resonator.
(Color online) Thickness of 3000 cycle TiN films deposited at different temperatures. Red squares are measurements taken with a Filmetrics reflectometer and blue diamonds are measurements taken with a VASE spectroscopic ellipsometer.
(Color online) Stress of ALD deposited TiN films as a function of deposition temperature. Blue diamonds represent the measured stress while the brow solid line is the ideal stress due to thermal mismatch. The red squares represent intrinsic stress, not due to thermal mismatch sources.
(Color online) XRD scans of the 〈200〉 peak of TiN for films deposited at 120, 160, 200, 250, and 300 °C. This was the only peak in the XRD scan that could not be attributed to the Si wafer.
(Color online) Crystallite size derived by application of Scherrer's formula to XRD scans of the 〈200〉 peak of TiN as a function of deposition temperature.
(Color online) Bargraph of TiN film composition as a function of deposition temperature. As temperature increases, we see a decrease in O and Cl and an increase in N. Cl is attributed to unreacted TiCl4 precursor and O is attributed to oxidation of unreacted Ti.
(Color online) High resolution XPS spectra for Ti 2p orbital (a), N 1s orbital (b), O 1s orbital (c) and Cl 2p orbital, (d) of ALD synthesized TiN films deposited at 120, 160, 200, 250, and 300 °C.
Scanning electron micrograph of a fabricated TiN beam resonator from the 200 °C deposition run. Beam dimensions are 11.3 μm long, 30 nm wide, and 72.9 nm thick.
(Color online) Resonance curve for a 160 nm wide, 72 nm thick, and 14.1 μm long resonator. From the FWHM of the peak a Q-factor of ∼6900 is obtained.
ALD TiN deposition recipe used in this work. All films were deposited for 3000 cycles.
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