Schematic of the experimental setup showing the ICP chamber, the Semion RFA deployed on a 300 mm wafer, and the ion flux probe (the guard ring of the probe is not shown for clarity).
Time variations of the ion flux during one plasma pulsing period in discharges pulsed at 1 kHz: (a) in helium, (b) in argon, (c) in Cl2/SiCl4. In each case, the total pressure is 10 mTorr and the RF ICP power 750 W. The gas flow rates are 50 sccm in (a) and (b), and a mixture of 20 sccm Cl2 and 60 sccm SiCl4 in (c). The results are presented for four duty cycles (10%, 25%, 50%, 75%) and the dotted line indicates the ion flux value in a CW plasma under identical operating conditions.
Time-averaged IVDF measured at the surface of the 300 mm wafer by the RFA analyzer. (a) Argon plasma: operating conditions identical to Fig. 2(b) but with the addition of 50 W RF biasing power pulsed in phase with the ICP power. (b) Cl2/SiCl4 plasma: operating conditions as in Fig. 2(c) but with the addition of 30 W RF biasing power. The dotted curve is the CW reference plasma.
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