(a) Two inch diameter Si(111) wafer is sectioned into sample strips. The sample strips are further sectioned smaller pieces, shown in (b). (b) Top view of the ∼12 × 3 mm sample pieces. The scratch used to initiate cleavage is shown as a white line. (c) Side view, where the orientation of the ( ) wafer flat points out of the page, and the surface to be exposed by cleavage points upwards. The location of the scratch and direction of the cleavage force are indicated.
(Color online) (a) Sample holder and mounted Si sample piece. (b) Si(111) sample piece with small scribed scratch to initiate cleavage. (c) Less successful Si(100) sample piece cut half-way through with diamond saw in an attempt to reduce cleavage force (see text). (d) CAD rendering of the sample holder showing details of the clamping system.
(Color online) (a) Side view of sample after cleavage, in the same orientation as Fig. 1(c) . STM scan locations A, B, and C relative to the tensile and compressive edges are indicated. (b) Extremely large atomically flat terrace at location A extending > 10 μm, showing a single atomic step in the lower left corner. (c) and (d) Surface morphology near the center of the sample, location B. Arrows in (c) indicate antiphase boundaries of the reconstruction. (e) and (f) Surface morphology near the compressive edge, location C. (g) Atomic resolution of the 2 × 1 reconstruction. (h) Surface morphology of a more disordered region. STM imaging parameters indicate bias applied to the sample.
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