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Ytterbium oxide formation at the graphene–SiC interface studied by photoemission
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10.1116/1.4792040
/content/avs/journal/jvsta/31/2/10.1116/1.4792040
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4792040
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Figures

Image of FIG. 1.
FIG. 1.

(a) Valence band spectra collected at photon energy of 140 eV from the graphene sample before and after Yb deposition and intercalation at 500 °C, after O2 exposure at 260 °C and heating from 300 to 500 °C. (b) Enlarged valence band spectra collected after Yb intercalation at 500 °C and after O2 exposure at 260 °C.

Image of FIG. 2.
FIG. 2.

(Color online) Si 2p spectra collected at photon energy of 140 eV from the graphene sample before and after Yb deposition and intercalation at 500 °C, after O2 exposure at 260 °C and heating from 300 to 500 °C.

Image of FIG. 3.
FIG. 3.

(Color online) π-band dispersion around the -point recorded from the graphene sample (a) before and (b) after Yb intercalation and (c) after O2 exposure at 260 °C. (d) and (e) Line profiles across π-bands taken after O2 exposure at BE = 1.0 and 2.2 eV, respectively.

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/content/avs/journal/jvsta/31/2/10.1116/1.4792040
2013-02-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ytterbium oxide formation at the graphene–SiC interface studied by photoemission
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/2/10.1116/1.4792040
10.1116/1.4792040
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