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Characteristics of silicon etching by silicon chloride ions
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View: Figures


Image of FIG. 1.
FIG. 1.

Sputtering yields of Si by Cl+, SiCl+, and SiCl3 + ion incidence as functions of ion incident energy. A data point for Si+ ion incidence at 300 eV is also shown as reference. The horizontal axis represents the square root of ion incident energy. The solid line represents a fitting curve to the Si sputtering yield data for Cl+ ions given in Refs. 5 and 6 . The dashed curve connecting the data for SiCl+ ion incidence is intended as a guide to the eye. A negative yield means that its absolute value represents the number of Si atoms deposited per incident ion.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the TOF measurement system for desorbed products from the sample surface.

Image of FIG. 3.
FIG. 3.

TOF measurement of various species desorbed from the sample surfaces by pulsed beams of (a) Cl+, (b) SiCl+, and (c) SiCl3 + ions. The horizontal axis represents time and the vertical axis represents the signal intensity of each desorbed species obtained from the QMS system. The intensity curves are horizontally shifted for clarity. The ion incident energy is 1000 eV and the ion flux is 1 × 1014/cm2/s in each case.

Image of FIG. 4.
FIG. 4.

Ratios of QMS signal intensities of (a) Cl, (b) SiCl, and (c) SiCl2 to those of Si for the cases of Cl+, SiCl+, and SiCl3 + ion beam incidence. The experimental conditions are the same as those of Fig. 3 .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of silicon etching by silicon chloride ions