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ToF-SIMS depth profiling of organic solar cell layers using an Ar cluster ion source
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10.1116/1.4793730
/content/avs/journal/jvsta/31/3/10.1116/1.4793730
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4793730
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of [60]PCBM and P3HT.

Image of FIG. 2.
FIG. 2.

(Color online) Positive ion depth profile traces collected using the instrument at GE-GRC (25 keV Bi3 + ion source for analysis and a low energy (500 eV) Ar+ ion source for material removal).

Image of FIG. 3.
FIG. 3.

(Color online) Negative ion depth profile traces collected using the instrument at GE-GRC (25 keV Bi3 + ion source for analysis and a low energy (500 eV) Cs+ ion source for material removal).

Image of FIG. 4.
FIG. 4.

(Color online) Positive ion ToF-SIMS depth profile which was collected using a 30 keV Bi3 + ion source. Erosion was performed using an Ar1500 + cluster ion source, with 5 kV energy at ION-TOF Germany.

Image of FIG. 5.
FIG. 5.

(Color online) Depth profile traces of Na+, K+, and N containing species (NH4 + and C6H16N+), these depth profile traces were constructed from the same data set shown in Fig. 4 .

Image of FIG. 6.
FIG. 6.

(Color online) Negative polarity ToF-SIMS depth profile measurement performed using the Ar cluster ion source at Tascon Germany. [60]PCBM reveals a molecular signal at 911 amu as well as a signal associated with C60 (720 amu) which remained stable up to the ITO layer.

Image of FIG. 7.
FIG. 7.

(Color online) Depth profile traces for F and Cl; both are detected in the organic layer and are enhanced at the ITO interface.

Image of FIG. 8.
FIG. 8.

(Color online) 3D renderings of the negative polarity data; the 3D plots for F and Cl reveal enhanced amounts at the ITO interface. X = Y = 200 μm, Z ∼ 220 nm.

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/content/avs/journal/jvsta/31/3/10.1116/1.4793730
2013-02-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ToF-SIMS depth profiling of organic solar cell layers using an Ar cluster ion source
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4793730
10.1116/1.4793730
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