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Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques
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10.1116/1.4795208
/content/avs/journal/jvsta/31/3/10.1116/1.4795208
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4795208
/content/avs/journal/jvsta/31/3/10.1116/1.4795208
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/content/avs/journal/jvsta/31/3/10.1116/1.4795208
2013-03-11
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4795208
10.1116/1.4795208
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