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Enhancement of solution-processed zinc tin oxide thin film transistors by silicon incorporation
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10.1116/1.4795760
/content/avs/journal/jvsta/31/3/10.1116/1.4795760
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4795760

Figures

Image of FIG. 1.
FIG. 1.

(Color online) HRXRD pattern of SZTO films depending on Si concentration.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Carrier concentration and resistivity of the SZTO films as a function of Si concentration and (b) optical transmittance of SZTO films as a function of Si content and (inset) plots of (αhν)2, extracted from (b).

Image of FIG. 3.
FIG. 3.

(Color online) Transfer characteristics of SZTO TFTs as a function of Si concentration.

Image of FIG. 4.
FIG. 4.

(Color online) XPS spectra of SZTO films (a) Zn 2p3/2 and (b) Sn 3d5/2 peak and O 1s in case of the mole ratio of Si:Zn:Sn was (c) 0:1:1 and (d) 0.02:1:1.

Tables

Generic image for table
TABLE I.

Calculated electrical properties of SZTO TFTs from saturation region.

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/content/avs/journal/jvsta/31/3/10.1116/1.4795760
2013-03-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of solution-processed zinc tin oxide thin film transistors by silicon incorporation
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4795760
10.1116/1.4795760
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