(Color online) SIMS profile of Mg concentration in multilayer InN SIMS stack. The sample has 5 Mg-doped InN layers with different Mg concentration and UID InN spacer between them. Inset is the Arrhenius plot of Mg concentration as a function of 1/(kb TMg).
(Color online) Comparison of surface morphology of UID (top left) and Mg-doped InN with Mg concentration below (top right) and above (bottom left) the inversion threshold. The bottom right image is the amplitude (derivative of surface morphology) map of S280.
Image and CBED patterns recorded from cross-section TEM sample. Lower left is a two-beam bright field electron scattering contrast image taken under g = 0002 diffraction condition. Among the InN layer, inversion domains exist as marked with ID. (a) and (b) are measured and simulated CBED patterns of InN from an inversion domain and the area outside this domain, respectively. The polarity of most InN layer was In-face and that of inversion domains was N-face. (c) Measured and simulated CBED patterns of GaN substrate. The polarity is Ga-face.
Apparent results of Hall and Seebeck measurement. Mg concentration of S300 was extracted by extrapolation of Arrhenius plot in Fig. 1 .
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