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Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method
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10.1116/1.4798309
/content/avs/journal/jvsta/31/3/10.1116/1.4798309
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4798309

Figures

Image of FIG. 1.
FIG. 1.

(Color online) SIMS depth profile of the InAlAs/InP structure grown by MBE.

Image of FIG. 2.
FIG. 2.

TOF-SIMS mass spectra of InP wafers using the standard acidic cleaning process: the (a) positive-ion TOF-SIMS mass spectrum; and (b) negative-ion TOF-SIMS mass spectrum.

Image of FIG. 3.
FIG. 3.

TOF-SIMS mass spectra of InP wafers under the cleaning process with NaOH replacing HF: the (a) positive-ion TOF-SIMS mass spectrum; and (b) negative-ion TOF-SIMS mass spectrum.

Image of FIG. 4.
FIG. 4.

TOF-SIMS mass spectra of InP wafers using the cleaning process where NaOH is applied after the HF solution: the (a) positive-ion TOF-SIMS mass spectrum; and (b) negative-ion TOF-SIMS mass spectrum.

Image of FIG. 5.
FIG. 5.

(Color online) Surface morphology of a cleaned InP wafer analyzed by three-dimensional optical profilers.

Tables

Generic image for table
TABLE I.

WCP used in this study.

Generic image for table
TABLE II.

Values of the main peaks measured by TOF-SIMS.

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/content/avs/journal/jvsta/31/3/10.1116/1.4798309
2013-03-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/3/10.1116/1.4798309
10.1116/1.4798309
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