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Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method
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10.1116/1.4804172
/content/avs/journal/jvsta/31/4/10.1116/1.4804172
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/4/10.1116/1.4804172

Figures

Image of FIG. 1.
FIG. 1.

SEM images of MgNiO:Li films grown on (0001) AlO substrates at different RF powers for MgO target: (a) 0, (b) 100, (c) 200, and (d) 300 W.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD patterns obtained from MgxNi1-xO:Li films grown on (0001) AlO substrates at various RF powers for MgO target. (b) XRD φ-scans of the films grown at 0 and 300 W of RF power.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Transmission spectra of MgNiO:Li films and (b) the plot of (αhν) ∼ hν (eV) calculated from the transmission spectra.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Mg mole fractions measured by EDS method. (b) Changes in band-gap as a function of Mg mole fraction, where the bowing parameter of 3.5 was used.

Image of FIG. 5.
FIG. 5.

(Color online) Average Li contents of MgNiO:Li films obtained by ICP-MS.

Image of FIG. 6.
FIG. 6.

(Color online) Electrical properties of MgxNiO:Li films measured by Hall measurement system.

Tables

Generic image for table
TABLE I.

Summary of results on optical band gap and Mg mole fraction results measured by optical transmittance and EDS, respectively.

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/content/avs/journal/jvsta/31/4/10.1116/1.4804172
2013-05-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/4/10.1116/1.4804172
10.1116/1.4804172
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