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Nanoscale characterization and metrology
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10.1116/1.4807116
/content/avs/journal/jvsta/31/5/10.1116/1.4807116
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/5/10.1116/1.4807116

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Triple axis, symmetric 004, ω-2θ rocking curves of SiGe alloy film.

Image of FIG. 2.
FIG. 2.

(Color online) Reciprocal space maps for SiGe (x = 0.3 and x = 0.7) alloys on Si (001). The RSMs for 004 and glancing exit 224 reflections were plotted in hkl crystallographic dimensions. This data proves the pseudomorphic nature of the SiGe (x = 0.3 and x = 0.7) alloys on Si (001). The 004 RSMs characterize the SiGe 004 lattice planes that are parallel to the Si 004 lattice planes while the 224 RSM characterize both the quality of the lattice both parallel and perpendicular to the Si lattice. Reprinted with permission from Muthinti , J. Appl. Phys. , 053519 (2012). Copyright 2012, American Institute of Physics.

Image of FIG. 3.
FIG. 3.

(Color online) Complex refractive index of pseudomorphic SiGe on Si(001) for several concentrations of Ge. Reprinted with permission fromMuthinti , J. Appl. Phys. , 053519 (2012). Copyright 2012, American Institute of Physics.

Image of FIG. 4.
FIG. 4.

(Color online) Experimental and theoretical shift of the E critical point of SiGe on Si(001) is shown. Reprinted with permission from Muthinti , J.Appl. Phys. , 053519 (2012). Copyright 2012, American Institute of Physics.

Image of FIG. 5.
FIG. 5.

(Color online) Ion beam backscattering analysis and x-ray reflectivity analysis of two Ni films. Reprinted with permission from Kamineni , J.Appl. Phys. , 093525 (2010). Copyright 2012, American Institute of Physics.

Image of FIG. 6.
FIG. 6.

Plot of (α/λ), function of average grain size and grain boundary reflection coefficient, vs film thickness. Reprinted with permission from Kamineni , J. Appl. Phys. 093525 (2010). Copyright 2012, American Institute of Physics.

Image of FIG. 7.
FIG. 7.

Reflection coefficient at Grain boundary vs thickness. Reprinted with permission from Kamineni , J. Appl. Phys. , 093525 (2010). Copyright 2012, American Institute of Physics.

Image of FIG. 8.
FIG. 8.

(Color online) Thickness dependence of the complex real part of thedielectric function of the Ni films. Reprinted with permission from Kamineni , J. Appl. Phys. 093525 (2010). Copyright 2012, American Institute of Physics.

Image of FIG. 9.
FIG. 9.

Thickness dependence of the electron relaxation time as determined using the Drude approximation for thin Ni films. Reprinted with permission from Kamineni , J. Appl. Phys. , 093525 (2010). Copyright 2012, American Institute of Physics.

Image of FIG. 10.
FIG. 10.

(Color online) Glancing angle x-ray diffraction measurement of thin film crystallinity.

Image of FIG. 11.
FIG. 11.

(Color online) Grazing incidence–in plane–x-ray diffraction (GI-I-XRD) characterization of thin film crystallinity.

Image of FIG. 12.
FIG. 12.

(Color online) Pole figure x-ray diffraction characterization of the grain texture of polycrystalline films.

Image of FIG. 13.
FIG. 13.

(Color online) Comparison of GI-I-XRD and diffracted intensity contour map as a function of the angle Ψ and lattice constant for textured ZrO films in the tetragonal phase.

Image of FIG. 14.
FIG. 14.

Imaginary part of the dielectric function of amorphous and textured monoclinic films Hf oxide and textured tetragonal films of Zr oxide. Note the presence of the sub-band gap absorption for the monoclinic films.

Tables

Generic image for table
TABLE I.

Film thickness, sheet resistance, and grain size for Ni films. Film thickness values are reported for Rutherford backscattering, x-ray reflectivity, and spectroscopic ellipsometry measurements. Further discussion can be found in Ref. .

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/content/avs/journal/jvsta/31/5/10.1116/1.4807116
2013-05-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale characterization and metrology
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/5/10.1116/1.4807116
10.1116/1.4807116
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