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Advances in silicon carbide science and technology at the micro- and nanoscales
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10.1116/1.4807902
/content/avs/journal/jvsta/31/5/10.1116/1.4807902
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/5/10.1116/1.4807902
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Structure of some SiC polytypes. The view is from a direction perpendicular to the 〈111〉 direction of the cubic lattice, or the c-axis of the hexagonal lattices. Atoms in the primitive cells are circled in red: note the lack of inversion symmetry. The stacking sequence is displayed at right in Zdanov notation for all structures. Another convenient way of classifying polytypes labels each SiC bilayer according to its hexagonal (h) or cubic (k) character. The 3C and 2H polytypes are purely cubic and haxagonal, respectively. Note that the 4H polytype has 50% hexagonality.

Image of FIG. 2.
FIG. 2.

(Color online) Key manufacturing technologies using silicon carbide thin films.

Image of FIG. 3.
FIG. 3.

Cross-section transmission electron micrographs of silicon carbide thin films. (a) PECVD amorphous SiC thin film, no scale bar in original work [reprinted with permission from Sarro , Sens. Actuators A , 175 (1998). Copyright (c) 1998, Elsevier], (b) nanocrystalline SiC thin film, scale bar 200 nm [reprinted with permission from Roper , J. Appl. Phys. , 084907 (2008). Copyright (c) 2008, American Institute of Physics], (c) and (d) polycrystalline SiC thin films, scale bar 200 nm [reprinted with permission from Roper , J. Appl. Phys. , 084907 (2008). Copyright (c) 2008, American Institute of Physics], (e) polycrystalline SiC thin film, scale bar 100 nm [reprinted with permission from Radmilovic , Diamond Relat. Mater. , 74 (2007). Copyright (c) 2007, Elsevier], and (f) epitaxial SiC thin film, scale bar 2 m [reprinted with permission from Lien , Cryst. Growth Des. , 36 (2009). Copyright (c) 2009, American Chemical Society].

Image of FIG. 4.
FIG. 4.

Cross-sectional SEM image of microtrenches coated with a 2 m 3C-SiC film grown using 1,3-DSB at 800 °C, scale bar 10 m [reprinted with permission from Wijesundara , J. Electrochem. Soc. , C210 (2004). Copyright (c) 2004, The Electrochemical Society].

Image of FIG. 5.
FIG. 5.

(Color online) (6√3 × 6√3)R30° LEED pattern (a) of epitaxial graphene monolayer on SiC (a). This sp-bonded carbon layer is held atop an sp3-bonded carbon “buffer” layer by electrostatic and van der Waals forces, as drawn schematically in (b). Reprinted with permission from Zhou , Physica E , 2642 (2008). Copyright (c) 2008, Elsevier.

Image of FIG. 6.
FIG. 6.

(Color online) Schematic diagram of microfabrication processes commonly used to create SiC structures.

Image of FIG. 7.
FIG. 7.

Scanning electron micrographs of wet-etched SiC. (a) single-crystal SiC cantilever beam fabricated by dopant-selective PEC etching, scale bar 2 m [reprinted with permission from Zhao , Mater. Lett. , 409 (2011). Copyright (c) 2011, Elsevier] and (b) etched n-SiC epilayer on p-SiC substrate, scale bar 10 m [reprinted with permission from Shor , J. Appl. Phys. , 1546 (1997). Copyright (c) 1997, American Institute of Physics].

Image of FIG. 8.
FIG. 8.

Scanning electron micrographs of plasma etch profiles of SiC (a) and (b) transformer couple plasma etched SiC, each scale bar 1 m [reprinted with permission from Gao , Appl. Phys. Lett. , 1742 (2003). Copyright (c) 2003, American Institute of Physics], and (c) inductively coupled plasma etched SiC, scale bar 20 m [reprinted with permission from Khan and Adesida, Appl. Phys. Lett. , 2268 (1999). Copyright (c) 1999, American Institute of Physics].

Image of FIG. 9.
FIG. 9.

(Color online) Circular transmission line method for determining contact resistance and a scanning electron microscopy image of Pt/SiC CTLM structure.

Image of FIG. 10.
FIG. 10.

(Color online) Bottom panel displays the evolution in contact resistance with time at 450  °C in air for the three situations displayed schematically in the top panel.

Image of FIG. 11.
FIG. 11.

Image of current–voltage response of single crystalline SiC nanowire device contacted with Ti/Au electrodes. Reprinted with permission from Seong , Appl. Phys. Lett. , 1256 (2004). Copyright © 2004, American Institute of Physics.

Image of FIG. 12.
FIG. 12.

Image of SiC microneedle impedance probe for minimally invasive or implantable applications. Reprinted with permission from Gabriel , Microelectron. J. , 406 (2007). Copyright © 2007, Elsevier.

Image of FIG. 13.
FIG. 13.

Image of microfabricated SiC thermionic energy converter. Reprinted with permission from Lee , J. Vac. Sci. Technol. B , 042001 (2012). Copyright © 2012, American Vacuum Society.

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2013-06-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Advances in silicon carbide science and technology at the micro- and nanoscales
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/5/10.1116/1.4807902
10.1116/1.4807902
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