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Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Illustration of various structures for which modification of semiconductor surfaces plays an important role. The “static” applications include modifying the interface between a semiconductor and a second material; chemically altering the surface of a bulk semiconductor; and chemically functionalizing a nanostructure. The “dynamic” surface responds to an external stimulus. In the example shown, the surface converts into one for which adsorption of a biomolecule becomes favored in one of the dynamic states.

Image of FIG. 2.
FIG. 2.

(Color online) STM image of intersecting Bi nanowires and styrene chains formed on the H-terminated Si(100) surface by hydrosilylation chemistry and Bi self-assembly. Figure reprinted with permission from Wang andHersam, J. Am. Chem. Soc. , 12896 (2008) (table of contents image). © 2008, American Chemical Society.

Image of FIG. 3.
FIG. 3.

(Color online) Mechanistic hypothesis that initiated study of enynes for monolayers on H-Si(111). Reprinted with permission from Rijksen , Langmuir , 6577 (2012). © 2012, American Chemical Society.

Image of FIG. 4.
FIG. 4.

(Color online) X–Ge ordinary covalent bond energies and dative bond energies for X=O, S, Se, calculated with density functional theory for Group VI elements. Computational details are described in Ref. .

Image of FIG. 5.
FIG. 5.

(Color online) (a) Schematic description of the simulation process for formation of linear nanopatterns upon adsorption of methanol and ethylene on Ge(100)-2×1. (b) and (d) Experimental STM images of Ge(100) (16 × 16 nm) with (b) 0.34 ML methanol (where dark = adsorbate), and (d)0.53 ML ethylene (where bright = adsorbate) (Refs. ). (c) and (e) Simulated adsorption patterns on Ge(100) (16 × 16 nm) of (c) 0.3 ML methanol, and (e) 0.5 ML ethylene (where white spot = adsorbate-occupied dimer) (Ref. ). One monolayer (ML) = 1 molecule per dimer. Reprinted with permission from Bae , J. Phys. Chem. C , 15013 (2007). Copyright 2007, American Chemical Society. Kim , J. Phys. Chem. B , 3256 (2004). Copyright 2004, American Chemical Society. Shong and Bent, J. Phys. Chem. C , 949 (2013). Copyright 2013, American Chemical Society.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM image of TiO taken after 100 ALD cycles at 300 °C on initially Br-terminated Ge(100) surface, as described in Ref. .

Image of FIG. 7.
FIG. 7.

(Color online) Schematic view of an ideal cycle during film growth by atomic layer deposition, ALD. The substrate is successively exposed to NH and a titanium-containing compound, TiL. In particular, when the ligand L is N(CH), the scheme shows an ALD cycle using TDMAT as metalorganic precursor. Figure based on a scheme in Ref. .

Image of FIG. 8.
FIG. 8.

(Color online) Cross-sectional TEM micrographs of a TiNC film before (a) and after (b) NH postannealing. The TiNC film in (a) is composed of crystalline nanostructures embedded into an amorphous matrix deposited onto a single crystalline silicon substrate. Upon NH postannealing to produce TiN layer in (b), the top layers of the film were mostly polycrystalline and the inner portion of the film above the single crystal silicon remained amorphous. Exposure to ethylene reversed the chemical composition and reactivity of the surface of the film to that of initially deposited TiCN. Figure reprinted with permission from Rodríguez-Reyes , Chem. Mater. , 5163 (2009) (table of contents image). © 2009, American Chemical Society.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems