Room temperature scanning electron micrograph of TaN grown on (a) SiO2 and (b) MgO, respectively. The length scale is indicated by the horizontal white line on bottom left.
(Color online) Room temperature atomic force microscopy images of TaN thin film grown on (a) SiO2 and (b) MgO substrates deposited at the same time at . (c) Line scans representing the variation in surface roughness measured along one of the diagonals of the scanned area.
(Color online) Room temperature x-ray diffraction patterns of TaN films deposited on (a) oxidized (100) Si and (b) (100) MgO substrates measured in θ–2θ mode. In each case, diffractograms corresponding to and 53.5 mTorr on SiO2 and 55.5 and 50.2 mTorr on MgO are shown. The diffractogram of the film deposited at on MgO was also measured and analyzed (not shown), producing all the same peaks as the film with . The corresponding glancing angle (5°) measurements are shown in panels (c) and (d). The reflections from various lattice planes of cubic (C) and hexagonal (H) phases have been identified and marked, with the characteristic positions of the cubic and hexagonal TaN phases indicated by the green and orange tick marks, respectively.
(Color online) (a) Temperature dependence of the resistivity normalized to the values at 275 K, of TaN film grown at 700 °C, revealing a superconducting transition of ∼8 and 5 K on MgO and SiO2 substrates, respectively. The respective were 55.5 and 53.5 mTorr. Temperature dependence of the resistivity of a TaN film, normalized to its value at 15 K, grown on (b) MgO and (c) SiO2 at several values of indicated (in mTorr). The highest obtained were 8 K and 6 K on MgO and SiO2, respectively.
Crystallite sizes associated with various orientations of TaN grains grown on SiO2 and on MgO substrates extracted from our x-ray data.
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