(a) Structure of a CdTe/CdS solar cell (not in scale), and (b) electric field profile in the CdTe absorber layer at higher output voltage.
Energy band diagrams of CdS/CdTe solar cell at zero output voltage at (a) illuminated and (b) dark conditions. The dashed lines represent the intrinsic Fermi level (EFi), and quasi-Fermi levels for electrons (EFn) and holes (EFp).
J-V curves for a CdTe/CdS solar cell for three different sun intensities.
J-V curves for CdTe/CdS solar cells for different absorber layer thicknesses. Solid and dotted lines represent analytical and numerical results, respectively.
Net current density vs output voltage for various electron lifetimes for W = 0.5 μm and τp = 2 × 10−9 s.
Net current density vs output voltage for various hole lifetimes for W = 0.5 μm and τn = 10−10 s.
Effect of acceptor concentration on the J-V characteristics of CdTe/CdS solar cells for W = 0.5 μm, τn = 10−10 s and τp = 2 × 10−9 s.
Physical parameters used in analytical model and numerical simulation.
Best fitted parameters used in analytical and numerical models for different absorber layer widths.
Article metrics loading...
Full text loading...