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Novel ArF photoresist polymer to suppress the formation of roughness in plasma etching processes
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10.1116/1.4815829
/content/avs/journal/jvsta/31/6/10.1116/1.4815829
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4815829

Figures

Image of FIG. 1.
FIG. 1.

Schematic of plasma source.

Image of FIG. 2.
FIG. 2.

Chemical structures of ArF photoresist films. (a) α-GBLMA/MAdMA/HAdMA, (b) OTDMA/MAdMA/DAdMA, and (c) OTDMA/MAdMA/CMAMA. DAdMA and CMAMA photoresists have norbornane structure in lactone group. DAdMA photoresist has hydroxyl group and CMAMA one has cyano group. Structures of protecting group are identical in three kinds of photoresist films.

Image of FIG. 3.
FIG. 3.

Etching rates for each ArF photoresist film under chlorine plasma etching conditions. Error bars indicate standard deviations.

Image of FIG. 4.
FIG. 4.

(Color online) SPM images of photoresist polymers after etching. Etching depth is 35 nm. Chlorine gas was used under all etching conditions. Height scale was 20 nm, and observed area was 400 × 400 nm. SPM images were measured by using contact mode. RMS roughness of each photoresist was calculated from SPM images.

Image of FIG. 5.
FIG. 5.

FTIR spectra of initial ArF photoresist films: (a) CO region (1800 cm = lactone group and 1730 cm = ester group) and (b) CH region. Thin lines are deconvoluted peaks.

Image of FIG. 6.
FIG. 6.

Ratios of decreased area to initial area at deconvoluted peaks. Decrease in ratio means that photoresist films are etched by plasma.

Image of FIG. 7.
FIG. 7.

Chemical structures of ArF photoresist films. (a) OTDMA/MAdMA/HAdMA and (b) NLMA/MAdMA/HAdMA. Structures of protecting and polar groups are identical in two kinds of photoresist films.

Image of FIG. 8.
FIG. 8.

Relationship between RMS roughness and ratio of CO bond dissociation. Dissociation of CO bonds is calculated from FTIR spectrum.

Tables

Generic image for table
TABLE I.

Monomer content in the polymers.

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/content/avs/journal/jvsta/31/6/10.1116/1.4815829
2013-07-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Novel ArF photoresist polymer to suppress the formation of roughness in plasma etching processes
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4815829
10.1116/1.4815829
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