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Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study
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10.1116/1.4816776
/content/avs/journal/jvsta/31/6/10.1116/1.4816776
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4816776
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Thickness and GPC as the function of the number of MgO ALD cycles on SiO/Si at deposition temperature of 250 °C.

Image of FIG. 2.
FIG. 2.

(Color online) GI-XRD patterns of MgO films (∼25 nm) deposited on SiO/Si at 250 °C.

Image of FIG. 3.
FIG. 3.

(Color online) Si 2p XPS core level spectra for (○) clean native SiO/Si substrate and samples after 10 ALD cycles at the take-off angles of 0° (◻) and 60° (Δ). ALD growth was carried out on native SiO/Si substrates at 250 °C.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Thickness change as the function of acquisition time on SiO (Δ) and ALD MgO (◻) surfaces. (b)−Δ change as the function of Mg(Cp) exposure time on SiO (Δ) and ALD MgO (◻) surfaces.

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/content/avs/journal/jvsta/31/6/10.1116/1.4816776
2013-07-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4816776
10.1116/1.4816776
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