(Color online) Thickness and GPC as the function of the number of MgO ALD cycles on SiO2/Si at deposition temperature of 250 °C.
(Color online) GI-XRD patterns of MgO films (∼25 nm) deposited on SiO2/Si at 250 °C.
(Color online) Si 2p XPS core level spectra for (○) clean native SiO2/Si substrate and samples after 10 ALD cycles at the take-off angles of 0° (◻) and 60° (Δ). ALD growth was carried out on native SiO2/Si substrates at 250 °C.
(Color online) (a) Thickness change as the function of acquisition time on SiO2 (Δ) and ALD MgO (◻) surfaces. (b)−Δ change as the function of Mg(Cp)2 exposure time on SiO2 (Δ) and ALD MgO (◻) surfaces.
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