1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)
Rent:
Rent this article for
USD
10.1116/1.4817496
/content/avs/journal/jvsta/31/6/10.1116/1.4817496
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4817496
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

LEED pattern from the GaSb(100) surface: (a) 2 × 3 at 73 eV after As capping layer removal, (b) (2 × 6) at 73 eV after Sb capping layer removal.

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra of (a) As 3, (b) O1 and Sb3, and (c) Ga2 core level spectra for As capped, Sb decapped, and As-decapped for 45° and 75° take-off angles.

Image of FIG. 3.
FIG. 3.

(Color online) ISS spectra for As and Sb-decapped surfaces, recordered for 1 kEv He beam incident at an angle of 72° relative to the surface plane with 143° scattering angle. The peaks at 810 and 880 eV result from scattering by gallium and antimony atoms, respectively. Inset shows ISS spectra normalized to the same height at maximum gallium intensity.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Ga 2 and (b) Sb 3 and O 1 XPS spectra showing chemical state evolution after the decapping procedure, 300 °C heat treatment and the first TMA pulse. The raw spectra after each of the following: 1st pulse of DIW exposure, 5 and 10 cycles, and finally after 20 full cycles of AlO deposition are also included, however spectral analysis shows no changes other than attenuation. (c) O 1 XPS spectra before and after the first pulse of TMA showing chemical shift associated with O-Al bond formation.

Image of FIG. 5.
FIG. 5.

(Color online) TEM picture of an AlO/GaSb(100) heterostructure showing an abrupt interface.

Loading

Article metrics loading...

/content/avs/journal/jvsta/31/6/10.1116/1.4817496
2013-08-05
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4817496
10.1116/1.4817496
SEARCH_EXPAND_ITEM