LEED pattern from the GaSb(100) surface: (a) 2 × 3 at 73 eV after As capping layer removal, (b) c(2 × 6) at 73 eV after Sb capping layer removal.
(Color online) XPS spectra of (a) As 3d, (b) O1s and Sb3d, and (c) Ga2p core level spectra for As capped, Sb decapped, and As-decapped for 45° and 75° take-off angles.
(Color online) ISS spectra for As and Sb-decapped surfaces, recordered for 1 kEv He+ beam incident at an angle of 72° relative to the surface plane with 143° scattering angle. The peaks at 810 and 880 eV result from scattering by gallium and antimony atoms, respectively. Inset shows ISS spectra normalized to the same height at maximum gallium intensity.
(Color online) (a) Ga 2p and (b) Sb 3d and O 1s XPS spectra showing chemical state evolution after the decapping procedure, 300 °C heat treatment and the first TMA pulse. The raw spectra after each of the following: 1st pulse of DIW exposure, 5 and 10 cycles, and finally after 20 full cycles of Al2O3 deposition are also included, however spectral analysis shows no changes other than attenuation. (c) O 1s XPS spectra before and after the first pulse of TMA showing chemical shift associated with O-Al bond formation.
(Color online) TEM picture of an Al2O3/GaSb(100) heterostructure showing an abrupt interface.
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