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Effect of open area ratio and pattern structure on fluctuations in critical dimension and Si recessa)
a)This article is based on material presented at the 59th Symposium of the American Vacuum Society.
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10.1116/1.4817811
/content/avs/journal/jvsta/31/6/10.1116/1.4817811
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4817811
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic drawing of effects of open area ratio at the wafer level (global: ), chip level (semi-local: ), and local level (Ω).

Image of FIG. 2.
FIG. 2.

(Color online) Layout of experimental wafers with different values (0.60, 0.72, 0.79, 0.86, and 0.91). Chips of open, hatched, and closed squares are covered with all poly-Si area(1), medium poly-Si area (0.72), and non poly-Si area (0).

Image of FIG. 3.
FIG. 3.

(Color online) Layout of experimental wafers with semi-local open area and various local patterns notated from A to H. Each pattern of A, B, C, and D has 6 different spaces as expressed by arrows. Patterns of F, G, and H are surrounded by other patterns 2 m away. The closed circle shown in each pattern was a measured point of Δ.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Δ as a function of global open area ratio . The solid line represents a fitting result of the least-squares method. (b) Measured taper angle of etched profiles for of 0.6 and 0.91. Two SEM images of etched profiles are also displayed.

Image of FIG. 5.
FIG. 5.

(Color online) Δ as a function of distance from chip edge in the cases of of 0.71, 0.76, and 0.87. Closed circles, triangles, and squares with solid lines represent the Δ values for many Si shots ( of 0.87), few Si shots ( of 0.76), and no Si shots ( of 0.71), respectively. P1, P2, P3, and P4 are locations of target patterns in the chip. Location of the chip edge is set to zero as a distance. Measured wafers and pattern density maps are also displayed.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Δ as a function of space of four different kinds of patterns in the case of of 0.72. (b) Δ dependent on solid angle viewing from a pattern in the case of of 0.72. The solid line represents a fitting result of the least-squares method.

Image of FIG. 7.
FIG. 7.

(Color online) Δ values of patterns E, F, G, and H as notated in Fig. 3 . These values are normalized by that of pattern E.

Image of FIG. 8.
FIG. 8.

(Color online) Integrated intensity derived from OES data (closed circle marks), which is the origin of the BΣ-Xπ transition state of the SiBr radical. Closed square marks represent the integrated intensity in the case of a 20% increase in total flow rate.

Image of FIG. 9.
FIG. 9.

(Color online) Schematic drawing of our flux model of etched by-product (SiBr), considering effects of global ( ), semi-local ( ), and local (Ω). Γ and Γ represent fluxes origin of and , respectively.

Image of FIG. 10.
FIG. 10.

Flowchart of our gate etching simulation procedure.

Image of FIG. 11.
FIG. 11.

(Color online) Schematic drawing of surface reaction and etch front evolution. () and ( + ) represent etch front of time and  + . Circle marks on the etch front are lattice points, and arrows from the points are normal vectors.

Image of FIG. 12.
FIG. 12.

(Color online) Schematic picture of Si recess depth in the pattern. , , and represent depths of deposition on the etched surface, gate oxide, and Si recess, respectively.

Image of FIG. 13.
FIG. 13.

(Color online) (a) Simulation results of etched profiles (photoresist, BARC, and poly-Si) in the cases of of 0.40 and 0.86. (b) Simulation results of etched profiles and Δ in the cases of Ω of 0.8 and 1.2. Observed etched profiles and Δ values are also displayed.

Image of FIG. 14.
FIG. 14.

(Color online) Solid lines represent (a) calculated deposition depth and (b) Si recess depth as a function of (  +  . Closed circles and squares represent measured values in the cases of patterns in the narrow and wide regions, respectively.

Image of FIG. 15.
FIG. 15.

(Color online) (a) SEM images of patterns in the narrow and wide regions. (b) and (c) TEM images of interface layer (poly-Si/gate-oxide) of patterns in the narrow and wide regions. The images in (b) and (c) are in the cases of as-etched and post wet treatment, respectively. Dashed lines represent the interface layer between gate oxide and Si substrate. Measured values of deposition depth ( ) and Si recess depth ( ) are also displayed.

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/content/avs/journal/jvsta/31/6/10.1116/1.4817811
2013-08-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of open area ratio and pattern structure on fluctuations in critical dimension and Si recessa)
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4817811
10.1116/1.4817811
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