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Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry
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10.1116/1.4818871
/content/avs/journal/jvsta/31/6/10.1116/1.4818871
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4818871
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Etch depths as a function of Al-content for BCl and BCl/Ar RIE plasma pretreatment for (a) plane AlGaN and (b) plane AlGaN.

Image of FIG. 2.
FIG. 2.

(Color online) Effect of pretreatment time for BCl and BCl/Ar RIE plasma for (a) plane AlN and (b) plane AlN.

Image of FIG. 3.
FIG. 3.

(Color online) Etch depths as a function of Al-content for BCl/Ar ICP-RIE (without Cl/Ar ICP-RIE) for 5 min on and plane AlGaN.

Image of FIG. 4.
FIG. 4.

(Color online) Effect of pretreatment time for BCl/Ar ICP plasma for and plane AlN.

Image of FIG. 5.
FIG. 5.

(Color online) Etch depths as a function of Al-content using BCl/Ar ICP-RIE pretreatment on (a) plane AlGaN and (b) plane AlGaN.

Image of FIG. 6.
FIG. 6.

Scanning electron microscope images of AlN (a) as grown and (b) after etching using BCl/Ar ICP-RIE pretreatment. The scale bar denotes 500 nm.

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/content/avs/journal/jvsta/31/6/10.1116/1.4818871
2013-08-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4818871
10.1116/1.4818871
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