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Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry
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10.1116/1.4818871
/content/avs/journal/jvsta/31/6/10.1116/1.4818871
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4818871
/content/avs/journal/jvsta/31/6/10.1116/1.4818871
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/content/avs/journal/jvsta/31/6/10.1116/1.4818871
2013-08-27
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4818871
10.1116/1.4818871
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