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Dry etching techniques for active devices based on hexagonal boron nitride epilayers
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10.1116/1.4826363
/content/avs/journal/jvsta/31/6/10.1116/1.4826363
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4826363
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Optical image showing the MSM UV and neutron detector layout.

Image of FIG. 2.
FIG. 2.

(Color online) RF1 power dependence for hBN epilayers etched in (a) SF and (b) Cl/BCl/Ar plasma.

Image of FIG. 3.
FIG. 3.

(Color online) AFM profile of hBN strip etched in SF.

Image of FIG. 4.
FIG. 4.

(Color online) SEM image of the cross-section profile of hBN strip devices etched in (a) Cl and (b) SF for comparison.

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/content/avs/journal/jvsta/31/6/10.1116/1.4826363
2013-10-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dry etching techniques for active devices based on hexagonal boron nitride epilayers
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/31/6/10.1116/1.4826363
10.1116/1.4826363
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