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Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices
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10.1116/1.4843535
/content/avs/journal/jvsta/32/1/10.1116/1.4843535
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/1/10.1116/1.4843535
/content/avs/journal/jvsta/32/1/10.1116/1.4843535
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/content/avs/journal/jvsta/32/1/10.1116/1.4843535
2013-12-11
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/1/10.1116/1.4843535
10.1116/1.4843535
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