(Color online) Log (J) vs V plots for M1IM2 diodes made with ZrCuAlNi bottom electrodes and Al top electrodes with (a) 10 nm of Nb2O5 and Ta2O5 insulators, and (b) 5 nm of Nb2O5 and Ta2O5 insulators. (c) Asymmetry (ηasym) plots and (d) nonlinearity (fNL) plots of diodes shown in (a) and (b). Insets in (a) illustrates energy band diagrams of Nb2O5 and Ta2O5 M1IM2 in equilibrium.
(Color online) Schottky plots in (a) and (b) for the low voltage regime (Vappl = 0.1 V to approximately 0.3 V) and Frenkel–Poole plots in (c) and (d) for the higher voltage regime (Vappl = 0.75 V to approximately 1 V) show highly linear curves with R2 > 0.999 for both 5 nm [shown in (b) and (d)] and 10 nm [shown in (a) and (c)] Nb2O5 and Ta2O5 diodes.
(Color online) (a) Log (J) vs V plots, (b) asymmetry (ηasym) plots, and (c) nonlinearity (fNL) plots of 10 nm Nb2O5 diodes at different temperatures. (d) Log J vs V plots, (e) asymmetry (ηasym) plots, and (f) nonlinearity (fNL) plots of 10 nm Ta2O5 diodes at different temperatures.
(Color online) Plots of Ea vs sqrt |V| in the Frenkel–Poole dominated bias regime (Vappl = 0.7 to 1 V) for (a) 10 nm Nb2O5 diodes, (b) 5 nm Nb2O5 diodes, (c) 10 nm Ta2O5 diodes, and (d) 5 nm Ta2O5 diodes. The trap depth, ϕT0, is extracted by extrapolation of the curves to zero bias. All the curves used for extrapolating trap depths are linear with R2 > 0.99.
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