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Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation
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10.1116/1.4846176
/content/avs/journal/jvsta/32/2/10.1116/1.4846176
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4846176
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic device structure and detailed process steps of GdO RRAMs with hydrogen PIII treatment. The important step of this study was marked in red color.

Image of FIG. 2.
FIG. 2.

(Color online) SIMS analysis of GdO RRAMs with hydrogen PIII treatment for 1, 5, and 10 min. Significant hydrogen atoms were observed at the Pt/GdO interface and the intensity was increased with an increase in the treatment time.

Image of FIG. 3.
FIG. 3.

(Color online) Currentvoltage () characteristics of GdO RRAMs with hydrogen PIII treatment. The inset figure shows the capacitancevoltage () curve of the sample without treatment and measured at 10 kHz.

Image of FIG. 4.
FIG. 4.

(Color online) Statistical distributions of (a) and , and (b) , , and the resistance ratio of GdO RRAMs with hydrogen PIII treatment. The decreased operation voltages and increased resistance ratio were obtained.

Image of FIG. 5.
FIG. 5.

(Color online) Area dependence of GdO RRAMs (a) without and (b) with hydrogen PIII treatment for 1 min. The increased with a decrease in the device area indicates that the Schottky emission was the dominant resistive switching mechanism.

Image of FIG. 6.
FIG. 6.

(Color online) Schottky emission fitting of GdO RRAMs with hydrogen PIII treatment. The increased barrier height was obtained with an increase in the PIII treatment time. The schematic energy band diagram for the Schottky emission of the Pt and GdO structure was shown in inset.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Resistance versus retention time characteristics of GdO RRAMs with hydrogen PIII treatment. (b) Resistance versus measurement temperature characteristics of the samples with hydrogen PIII treatment. The resistance was measured from 25 to 85  °C.

Image of FIG. 8.
FIG. 8.

(Color online) Endurance characteristics of GdO RRAMs with and without hydrogen PIII treatment for 1 min. The GdO RRAM with PIII treatment for 1 min can sustain stable and approximately 103 times resistance ratio for more than 250 cycles.

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/content/avs/journal/jvsta/32/2/10.1116/1.4846176
2013-12-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4846176
10.1116/1.4846176
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