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Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory
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10.1116/1.4858600
/content/avs/journal/jvsta/32/2/10.1116/1.4858600
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4858600
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Detailed processing steps of the W-NC memories with oxygen PIII treatment. The oxygen PIII was performed through the first 10-nm-thick SiO layer deposited by PECVD and another 10-nm-thick SiO layer was deposited to obtain the blocking oxide with a thickness of approximately 20 nm. (b) Schematic diagram of the oxygen PIII system.

Image of FIG. 2.
FIG. 2.

(Color online) (a) SRIM/TRIM simulation of the implantation profile for oxygen ions embedded in the memory structure with oxygen PIII treatment at a bias voltage of 7 kV for 3 min. The multispecies plasma of O+, O++, and O + are used for the simulation. (b) SRIM/TRIM simulation of the implantation profiles for W-NC memories with oxygen PIII treatment at bias voltages of 7, 9, and 15 kV for 3 min.

Image of FIG. 3.
FIG. 3.

(Color online) Read disturbance characteristics of the W-NC memories with and without oxygen PIII treatment at a bias voltage of 7 kV for 3 min. The samples are compared after sweeping the cycle measurement 15 times.

Image of FIG. 4.
FIG. 4.

(Color online) hysteresis memory window vs sweep voltage characteristics of W-NC memories treated with different oxygen PIII bias voltages and treatment times. The sweep voltage ranged from 3 to 17 V.

Image of FIG. 5.
FIG. 5.

(Color online) Data retention characteristics of W-NC memories with different oxygen PIII treatment conditions. A sample with an oxygen PIII treatment at 15 kV for 3 min published in our previous study is also shown for the comparison.

Image of FIG. 6.
FIG. 6.

HRTEM image of the W-NC memory with an oxygen PIII treatment at a bias voltage of 7 kV for 3 min. The image of the sample with oxygen PIII treatment at a bias voltage of 15 kV for 3 min in our previous study is shown in the inset figure.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Data retention characteristics of the W-NC memory with an oxygen PIII treatment at a bias voltage of 7 kV for 3 min at various measurement temperatures. The data retention characteristic is measured from 25 to 85 °C. (b) Effective charge trapping level ( ) extraction of the WO film surrounding the W-NCs. With increasing oxygen PIII bias voltages and treatment times, the of the WO film decreases from 1.04 to 0.34 eV.

Image of FIG. 8.
FIG. 8.

(Color online) Schematic energy band diagrams of W-NC memories with an oxygen PIII treatment at (a) 9 kV for 3 min and (b) 7 kV for 3 min. The lower contributes to the increased charge loss phenomenon.

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/content/avs/journal/jvsta/32/2/10.1116/1.4858600
2014-01-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4858600
10.1116/1.4858600
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