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Effect of plasma treatment of resistive layer on a Cu/SiOx/Pt memory device
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10.1116/1.4859235
/content/avs/journal/jvsta/32/2/10.1116/1.4859235
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4859235
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Resistive switching characteristics: (a) Control sample; (b) Ar-treated sample.

Image of FIG. 2.
FIG. 2.

(Color online) Statistical distribution of the SET and RESET voltages for the control and Ar-treated samples.

Image of FIG. 3.
FIG. 3.

(Color online) Statistical distribution of HRS resistance and LRS resistance for the control and Ar-treated samples.

Image of FIG. 4.
FIG. 4.

(Color online) Fitting results of the HRS conduction mechanism for the control and Ar-treated samples.

Image of FIG. 5.
FIG. 5.

Programing power of the SET and RESET processes for the control and Ar-treated samples.

Image of FIG. 6.
FIG. 6.

(Color online) Endurance behavior of the control and Ar-treated samples.

Image of FIG. 7.
FIG. 7.

(Color online) Cyclic voltammetry results for the control and Ar-treated samples with a sweep rate of v = 543 mV/s.

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/content/avs/journal/jvsta/32/2/10.1116/1.4859235
2014-01-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of plasma treatment of resistive layer on a Cu/SiOx/Pt memory device
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4859235
10.1116/1.4859235
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