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Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices
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10.1116/1.4865551
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    Affiliations:
    1 Department of Materials Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 24301, Taiwan and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 24301, Taiwan
    2 Department of Electronic Engineering, Chang Gung University, No. 259, Wen-Hwa 1st Rd., Kwei-Shan Tao-Yuan 33302, Taiwan
    3 Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan
    a) Electronic mail: lcchang@mail.mcut.edu.tw
    J. Vac. Sci. Technol. A 32, 02B119 (2014); http://dx.doi.org/10.1116/1.4865551
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/content/avs/journal/jvsta/32/2/10.1116/1.4865551
2014-02-19
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4865551
10.1116/1.4865551
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