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Determination of subband energies and 2DEG characteristics of Al x Ga1− x N/GaN heterojunctions using variational method
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10.1116/1.4865562
/content/avs/journal/jvsta/32/2/10.1116/1.4865562
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4865562

Figures

Image of FIG. 1.
FIG. 1.

Calculated conduction band diagram of a gated AlGaN/GaN heterostructure with Al mole fraction of 0.3 and barrier thickness of 20 nm, at  = 0. Calculations are presented in terms of the variational method and the triangular quantum well approximation.

Image of FIG. 2.
FIG. 2.

Variation of the first (solid line) and second (dashed line) subbands ( and ) and Fermi energy level (dashed–dotted line) with Al mole fraction at  = 0.

Image of FIG. 3.
FIG. 3.

(a) Variation of the first (solid line) and second (dashed line) subbands ( and ) and Fermi energy level (dashed–dotted line) with barrier thickness at  = 0 for Al mole fractions of 0.2 and 0.3. (b) Variation of the 2DEG carrier concentration as a function of barrier thickness for Al mole fractions of 0.1–1.

Image of FIG. 4.
FIG. 4.

Comparison of the simulated 2DEG concentrations and experimental data obtained from Ref. 15 for AlGaN/GaN heterojunctions with barrier thickness (d) of 30 nm. The relaxation of the built-in strain in the barrier is not taken into account in the present model.

Image of FIG. 5.
FIG. 5.

Variation of the Fermi level (dashed–dotted line), first (solid line), and second (dashed line) energy subbands with background donor concentration in an AlGaN/GaN heterojunction with Al mole fraction of 0.2 and barrier thickness of 20 nm.

Image of FIG. 6.
FIG. 6.

Variation of the 2DEG carrier concentration (dashed line), first (solid line) and second (dotted line) subbands ( and ), and Fermi energy level (dashed–dotted line) of a gated AlGaN/GaN heterojunction with gate voltage.

Tables

Generic image for table
TABLE I.

First and second energy subbands as functions of 2DEG concentration, (cm −2), for different Al mole fractions and barrier thicknesses. The functions are extracted through the interpolation of calculated values according to the proposed model. The spontaneous and piezoelectric constants used in these calculations are based on corrected values in Ref. 16 .

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/content/avs/journal/jvsta/32/2/10.1116/1.4865562
2014-02-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/2/10.1116/1.4865562
10.1116/1.4865562
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